摘要
在分析用电子束蒸发制备铟锡氧化物(ITO)透明导电膜的静态工艺流程的基础上,提出了多种参数同步变化的动态工艺流程。用这种新颖的工艺流程制备了优质的ITO透明导电膜,方块电阻为5Ω时,透光率大于90％,并对静态、动态和退火工艺的实验结果进行了综合分析。实验结果和理论分析表明,动态变化的电子束蒸发工艺是制备优质ITO透明导电膜的有效方法。
Based on the analysis of a static ebeam evaporation technology, a dynamic e-beam evaporation technology whose multitechnical parameters vary synchronously has been proposed and used for preparing indium tin oxide transparent conducting film reproducibly with excellent properties, sheet resistance of 5Ω/□ and transparency of more than 90%. The experimental results of the static, dynamic and annealing technology are given and analyzed here. The results demonstrate that dynamic e-beam evaporation technology is an effective method for preparing excellent ITO transparent conducting film.
出处
《功能材料》
EI
CAS
CSCD
1993年第5期407-411,共5页
Journal of Functional Materials
关键词
铟锡氧化物
透明导电膜
电子束
e-beam evaporation
indium tin oxide transparent conducting film
static technology
dynamic Technology
annealing technology
