摘要
采用有限元Comsol 4.3a软件对多晶硅定向凝固结晶阶段3个时期(前期、中期、后期)坩埚内硅熔体的流速场进行数值模拟,并与不同磁场强度下的硅熔体流速场进行了对比分析。结果表明,硅熔体的平均流速随着结晶时间的延长而减小,从初期的38μm/s减小到后期的16μm/s,下降了57.89%。施加磁场后,硅熔体的平均流速随着磁场强度的增大而减小:结晶初期、中期和后期,硅熔体的平均流速分别减小了42.11%、58.59%和45.16%。结晶阶段3个时期分别施加磁场强度为0.6、0.4、0.2 T时,磁场对硅熔体的对流抑制作用最为明显。
The flow field of polysilicon within crucible was numerical simulated in the three periods ( the initial, the middle and the last) of crystallization during the directional solidification by comsol 4.3a software which based on FEM, and comparatively in accordance analyzed with the velocity field of silicon melt under different magnetic density.The results show that the average flow velocity of the silicon melt decreases with the increase of crystallization time, from 38μm/s in the initial stage to 16μm/s in the late stage,which is reduced 57.89%. After applying magnetic field, the average flow velocity of the silicon melt decreases with the increase of magnetic density.The average flow velocity of the silicon melt is reduced by 42.11%,58.59%and 45.16%respectively in the initial, middle and late stage of crystallization. The inhibitory effect of silicon melt convection by the magnetic field is most obvious, if the magnetic density of 0.6, 0.4, 0.2 T is applied respectively in the three periods ( the initial, the middle and the last) of the crystallization stage during the directional solidification.
出处
《金属热处理》
CAS
CSCD
北大核心
2015年第1期185-189,共5页
Heat Treatment of Metals
基金
国家自然科学基金(51164033)
江西省自然科学基金(20132BAB206021)
江西省高等学校科技落地计划项目(KJLD12050)
江西省教育厅科学技术研究项目(12747
11739
12748)
江西省科技支撑计划项目(20123BBE50116)
关键词
多晶硅
磁场
流速场
数值模拟
polysilicon
magnetic field
flow field
numerical simulation
