摘要
A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor,reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.
A key point in SEE (Single Event Effect) simulation experiment is how to calculate the equivalent LET (Linear Energy Transfer) for laser pulse. In this paper, the calculation method considering the influences of nonlinear absorption in semiconductor, reflection and refraction on device surface and other factors is presented. Simultaneously an instance of calculation is provided, with the result in good agreement with the SEU (Single Event Upset) threshold measured by heavy ions.
基金
This work was supported by the“10th Five-Year”Supporting Technology Program of the Chinese Academy of Sciences(Grant No.03422101020304).
作者简介
Correspondence should be addressed to Huang Jianguo(email:jghuang@earth.sepc.ac.cn)
