An advanced configuration for multilevel voltage source converters is proposed. The proposed converter is able to apply asymmetrical DC sources. The configuration of the proposed inverter is well designed in order to ...An advanced configuration for multilevel voltage source converters is proposed. The proposed converter is able to apply asymmetrical DC sources. The configuration of the proposed inverter is well designed in order to provide the maximum number of voltage levels in output terminals using lower number of circuit devices. The authority of the proposed inverter versus the conventional H-bridge cascaded inverter and the most recently introduced ones, is verified with a provided comparison study. The proposed inverter is able to generate the desired voltage levels using a lower number of circuit devices including power semi-conductor switches, IGBTs, diodes, related gate driver circuits of switches and DC voltage sources. As a result, the total cost and installation area are considerably reduced and the control scheme gets simpler. To confirm the feasibility of the proposed multilevel structure, both the simulation and experimental results are provided and compared which shows good agreements.展开更多
A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve.The dimension of the resistive voltage divider is optimized by means of num...A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve.The dimension of the resistive voltage divider is optimized by means of numerical computation of electric field.A pulse frequency modulation(PFM) mode is adopted for the data transmission link because of its immunity to high-intensity electromagnetic interference.Experimental results indicate that the linearity deviation for the whole measuring system is within ±0.15%,and therefore it can meet requirements specified by IEC60700-1.展开更多
The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）,...The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.展开更多
文摘An advanced configuration for multilevel voltage source converters is proposed. The proposed converter is able to apply asymmetrical DC sources. The configuration of the proposed inverter is well designed in order to provide the maximum number of voltage levels in output terminals using lower number of circuit devices. The authority of the proposed inverter versus the conventional H-bridge cascaded inverter and the most recently introduced ones, is verified with a provided comparison study. The proposed inverter is able to generate the desired voltage levels using a lower number of circuit devices including power semi-conductor switches, IGBTs, diodes, related gate driver circuits of switches and DC voltage sources. As a result, the total cost and installation area are considerably reduced and the control scheme gets simpler. To confirm the feasibility of the proposed multilevel structure, both the simulation and experimental results are provided and compared which shows good agreements.
文摘A high-voltage optoelectronic probe is developed for measuring impulse voltage distribution along thyristor units in the HVDC converter valve.The dimension of the resistive voltage divider is optimized by means of numerical computation of electric field.A pulse frequency modulation(PFM) mode is adopted for the data transmission link because of its immunity to high-intensity electromagnetic interference.Experimental results indicate that the linearity deviation for the whole measuring system is within ±0.15%,and therefore it can meet requirements specified by IEC60700-1.
基金supported by National High-tech Research and Development Program of China（863 Program）（2009AA04Z416） National Science Foundation of China（51021005） Scientific Innovation of Colleges and Universities（Project v-200704）
基金supported by National High-tech Research and Development Program of China（863 Program）（2009AA04Z416） National Science Foundation of China（51021005） Scientific Innovation of Colleges and Universities（200704）
基金supported by the Second Stage of Brain Korea 21 Projectsfinancially supported by Changwon National University in 2011-2013
文摘The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.
