We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO（001） substrates by molecular beam epitaxy at different deposition angles,i.e.,0？,30？,45？,60？,and...We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO（001） substrates by molecular beam epitaxy at different deposition angles,i.e.,0？,30？,45？,60？,and 75？with respect to the surface normal.Low energy electron diffraction（LEED）,surface magneto–optical Kerr effect（SMOKE）,and anisotropic magnetoresistance（AMR） setups were employed to investigate the magnetic properties of cobalt films.The values of in-plane uniaxial magnetic anisotropy（UMA） constant Ku and four-fold magnetocrystalline anisotropy constant K1 were derived from magnetic torque curves on the base of AMR results.It was found that the value of Ku increases with increasing deposition angle with respect to the surface normal,while the value of K_1 remains almost constant for all the samples.Furthermore,by using MOKE results,the Ku values of the films deposited obliquely were also derived from the magnetization curves along hard axis.The results of AMR method were then compared with that of hard axis fitting method（coherent rotation） and found that both methods have almost identical values of UMA constant for each sample.展开更多
In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550...In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.展开更多
The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer （ML） grown on Si（111） have been investigated by ferromagnetic resonance （FMR） and vibrating sample mag...The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer （ML） grown on Si（111） have been investigated by ferromagnetic resonance （FMR） and vibrating sample magnetometer （VSM）. Owing to the significant modification of the energy surface in remanent state by slight misorientation from （111） plane and a uniaxial magnetic anisotropy, the azimuthal angular dependence of in-plane resonance field shows a six-fold symmetry with a weak uniaxial contribution, while the remanence of hysteresis loops displays a two-fold one. The competition between the first and second magnetoerystalline anisotropies may result in the switching of in-plane easy axis of the system. Combining the FMR and VSM measurements, the magnetization reversal mechanism has also been determined.展开更多
In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed...In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.展开更多
A dispersion compensation method is introduced to correct the distorted image passing through an ultrathin metal film.An LCD-CCD system is modeled by the back propagation network and used to evaluate the transmittance...A dispersion compensation method is introduced to correct the distorted image passing through an ultrathin metal film.An LCD-CCD system is modeled by the back propagation network and used to evaluate the transmittance of the ultrathin metal film.Training samples for the network come from 729 images captured by shooting test patches,in which the RGB values are uniformity distributed between 0 and 255.The RGB value of the original image that will be distorted by the dispersion is first transformed by mapping from the LCD to the CCD,multiplied by the inverse matrix of the transmittance matrix,and finally transformed by mapping from the CCD to the LCD,then the corrected image is obtained.In order to verify the effectiveness of the proposed method,ultrathin aluminum films with different thicknesses are evaporated on glass substrates and laid between the CCD and LCD.Experimental results show that the proposed method compensates for the dispersion successfully.展开更多
We discuss the surface plasmon-polaritons used for ultrathin metal films with the aid of linear response theory and make comparisons with the known result given by Economou E N. In this paper we consider transverse el...We discuss the surface plasmon-polaritons used for ultrathin metal films with the aid of linear response theory and make comparisons with the known result given by Economou E N. In this paper we consider transverse electromagnetic fields and assume that the electromagnetic field in the linear response formula is the induced field due to the current of the electrons. It satisfies the Maxwell equation and thus we replace the current （charge） term in the Maxwell equation with the linear response expectation value. Finally, taking the external field to be zero, we obtain the dispersion relation of the surface plasmons from the eigenvalue equation. In addition, the charge-density and current-density in the z direction on the surface of ultrathin metal films are also calculated. The results may be helpful to the fundamental understanding of the complex phenomenon of surface plasmon-polaritons.展开更多
Excellent quality ultrathin TiO2 films were obtained from tetrabutyl titanate andarachidic acid by a two-dimensional sol-gel process, followed with thermal decomposition ofthe complex multilayer Langnuirblodgett films...Excellent quality ultrathin TiO2 films were obtained from tetrabutyl titanate andarachidic acid by a two-dimensional sol-gel process, followed with thermal decomposition ofthe complex multilayer Langnuirblodgett films. The UV-vis spectra of the multilayer filmsshowed a blue shift of the absorption band relative to those of bulk TiO2, inlplying the for-mation of nanoparticles of TiO2-based condensates. Their uniformity and rutile type struc-ture were revealed by TEM and XRD results.展开更多
基金Project supported by the Chinese Academy of Sciences–The World Academy of Sciences(CAS–TWAS)Fellowship Programthe National Basic ResearcProgram of China(Grant Nos.2015CB921403 and 2012CB933102)the National Natural Science Foundation of China(Grant Nos.51427801,1137435and 11274361)
文摘We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO（001） substrates by molecular beam epitaxy at different deposition angles,i.e.,0？,30？,45？,60？,and 75？with respect to the surface normal.Low energy electron diffraction（LEED）,surface magneto–optical Kerr effect（SMOKE）,and anisotropic magnetoresistance（AMR） setups were employed to investigate the magnetic properties of cobalt films.The values of in-plane uniaxial magnetic anisotropy（UMA） constant Ku and four-fold magnetocrystalline anisotropy constant K1 were derived from magnetic torque curves on the base of AMR results.It was found that the value of Ku increases with increasing deposition angle with respect to the surface normal,while the value of K_1 remains almost constant for all the samples.Furthermore,by using MOKE results,the Ku values of the films deposited obliquely were also derived from the magnetization curves along hard axis.The results of AMR method were then compared with that of hard axis fitting method（coherent rotation） and found that both methods have almost identical values of UMA constant for each sample.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2015AA016501)the National Natural Science Foundation of China(Grant Nos.61574168 and 61504163)
文摘In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.
基金Project supported by the National Basic Resea.rch Program of China （Grant Nos. 2009CB929201, 2010CB934202, and 2011CB921801） and the National Natural Science Foundation of China （Grant Nos. 50931006, 11034004, and 51021061）.
文摘The magnetic anisotropy and magnetization reversal of single crystal Fe films with thickness of 45 monolayer （ML） grown on Si（111） have been investigated by ferromagnetic resonance （FMR） and vibrating sample magnetometer （VSM）. Owing to the significant modification of the energy surface in remanent state by slight misorientation from （111） plane and a uniaxial magnetic anisotropy, the azimuthal angular dependence of in-plane resonance field shows a six-fold symmetry with a weak uniaxial contribution, while the remanence of hysteresis loops displays a two-fold one. The competition between the first and second magnetoerystalline anisotropies may result in the switching of in-plane easy axis of the system. Combining the FMR and VSM measurements, the magnetization reversal mechanism has also been determined.
基金Project supported by the "China National Science and Technology Major Project 02" (Grant No. 2009ZX02035-003)the National Natural Science Foundation of China (Grant No. 61176090)the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
文摘In this paper we investigate the formations and morphological stabilities of Co-silicide fihns using 1-8-nm thick Co layers sputter-deposited on silicon （100） substrates. These ultrathin Co-silicide films are formed via solid-state reaction of the deposited Co films with Si substrate at annealing temperatures from 450 ℃ to 850 ℃. For a Co layer with a thickness no larger than i nm, epitaxially aligned CoSi2 films readily grow on silicon （100） substrate and exhibit good morphological stabilities up to 600 ℃. For a Co layer thicker than 1 nm, polycrystalline CoSi and CoSi2 films are observed. The critical thickness below which epitaxially aligned CoSi2 film prevails is smaller than the reported critical thickness of the Ni layer for epitaxial alignment of NiSi2 on silicon （100） substrate. The larger lattice mismatch between the CoSi2 film and the silicon substrate is the root cause for the smaller critical thickness of the Co layer.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA044001)the Open Funds of the State Key Laboratory of Robotics and Systems (HIT),China (Grant No. SKLRS-2010-MS-01)the Fundamental Research Funds for the Central Universities,China
文摘A dispersion compensation method is introduced to correct the distorted image passing through an ultrathin metal film.An LCD-CCD system is modeled by the back propagation network and used to evaluate the transmittance of the ultrathin metal film.Training samples for the network come from 729 images captured by shooting test patches,in which the RGB values are uniformity distributed between 0 and 255.The RGB value of the original image that will be distorted by the dispersion is first transformed by mapping from the LCD to the CCD,multiplied by the inverse matrix of the transmittance matrix,and finally transformed by mapping from the CCD to the LCD,then the corrected image is obtained.In order to verify the effectiveness of the proposed method,ultrathin aluminum films with different thicknesses are evaporated on glass substrates and laid between the CCD and LCD.Experimental results show that the proposed method compensates for the dispersion successfully.
基金supported by the Cultivation of Innovative Talents of the Colleges and Universities of Guangdong Province of China(Grant No. LYM10098)
文摘We discuss the surface plasmon-polaritons used for ultrathin metal films with the aid of linear response theory and make comparisons with the known result given by Economou E N. In this paper we consider transverse electromagnetic fields and assume that the electromagnetic field in the linear response formula is the induced field due to the current of the electrons. It satisfies the Maxwell equation and thus we replace the current （charge） term in the Maxwell equation with the linear response expectation value. Finally, taking the external field to be zero, we obtain the dispersion relation of the surface plasmons from the eigenvalue equation. In addition, the charge-density and current-density in the z direction on the surface of ultrathin metal films are also calculated. The results may be helpful to the fundamental understanding of the complex phenomenon of surface plasmon-polaritons.
基金supported by the National Found for Fostering Talents of Basic Science(NFFTBS)(J0630311)National Natural Science Foundation of China(10934001,60907015,10821062)National Key Basic Research Program of China(973)(2007CB307000,2009CB930504)~~
文摘Excellent quality ultrathin TiO2 films were obtained from tetrabutyl titanate andarachidic acid by a two-dimensional sol-gel process, followed with thermal decomposition ofthe complex multilayer Langnuirblodgett films. The UV-vis spectra of the multilayer filmsshowed a blue shift of the absorption band relative to those of bulk TiO2, inlplying the for-mation of nanoparticles of TiO2-based condensates. Their uniformity and rutile type struc-ture were revealed by TEM and XRD results.
基金supported by the National Natural Science Foundation of China(20874056,20836004,20974058)National Key Basic Research Program of China(973)(2009CB930602)~~
