Steam-reforming is an effective approach for upgrading methane and hydrocarbon of coke-oven gas into CO and HE, but the kinetic behavior needs more study. We investigated the conversion of methane in coke-oven gas by ...Steam-reforming is an effective approach for upgrading methane and hydrocarbon of coke-oven gas into CO and HE, but the kinetic behavior needs more study. We investigated the conversion of methane in coke-oven gas by steam reforming process in an electric tubular flow at 14 kPa with temperature varying from .500 ℃ to 9.50 ℃, and developed a kenetic model for, ignoring the effects of adsorption and diffusion. The optimal dynamic conditions for methane conversion 14 kPa are as follows： the ratio of the amount of water to the amount of methane is from 1.1 to 1.3; the reaction temperature is from 1 223 K to 1 273 K. The methane conversion rate is larger than 95% when the ratio of the amount of water to the amount of methane is 1.2 at a temperature above 1 223 K with the residence time up to 0.75 s.展开更多
Electrocatalytic conversion of renewable biomass is emerging as a promising route for sustainable chemical production;hence it urgently calls for developing efficient electrocatalysts with low potentials and high curr...Electrocatalytic conversion of renewable biomass is emerging as a promising route for sustainable chemical production;hence it urgently calls for developing efficient electrocatalysts with low potentials and high current densities.Herein,a Pr-doped Co(OH)_(2)hexagonal sheet(Pr/Co=1/9,in mole)is synthesized by electrodeposition as highly performant catalyst for 5-hydroxymethylfurfural(HMF)oxidation reaction(HMFOR)to produce 2,5-furandicarboxylic acid(FDCA).This novel and low-cost catalyst possesses a rather low onset potential of 1.05 V(vs.RHE)and requires only 1.10 V(vs.RHE)to reach a current density of 10 mA cm^(-2)for HMFOR,significantly outperforming Co(OH)_(2)benchmark(i.e.,210 mV higher to reach10 m A cm^(-2)).The origin of Pr promotion effect as well as the evolution of CoOOH catalytic sites and HMFOR process has been deeply elucidated by physical characterizations,kinetic experiments,in situ electrochemical techniques,and theoretical calculations.The unique Pr-ameliorated CoOOH active centers enable 100%conversion of HMF,99.6%selectivity of FDCA,and 99.7%Faraday efficiency,with a superior cycling durability toward HMFOR.This can be one of the most outstanding results for Co-based HMFOR catalysts to date in the literature.Thereby this work can help open up new horizons for constructing novel and efficient Co-based electrocatalysts by the utilization of lanthanide elements.展开更多
Inhibiting the radiative radiation is an efficient approach to enhance quantum yields in a solar sell.This work carries out the inhibition of radiative recombination rate(RRR)in a quantum photocell with two coupled do...Inhibiting the radiative radiation is an efficient approach to enhance quantum yields in a solar sell.This work carries out the inhibition of radiative recombination rate(RRR)in a quantum photocell with two coupled donors.We perform explicit calculations of the transition rates,energy gaps and the absorbed solar wavelength-dependent RRR,and find that two different regimes play the crucial roles in inhibiting RRR.One is the quantum coherence generated from two different transition channels,the other includes the absorbed photon wavelength and gaps between the donor and acceptor in this proposed photocell model.The results imply that there may be some efficient ways to enhance the photoelectron conversion compared to the classic solar cell.展开更多
Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
基金the Postdoctoral Foundation of China under the grant No. 2910001
文摘Steam-reforming is an effective approach for upgrading methane and hydrocarbon of coke-oven gas into CO and HE, but the kinetic behavior needs more study. We investigated the conversion of methane in coke-oven gas by steam reforming process in an electric tubular flow at 14 kPa with temperature varying from .500 ℃ to 9.50 ℃, and developed a kenetic model for, ignoring the effects of adsorption and diffusion. The optimal dynamic conditions for methane conversion 14 kPa are as follows： the ratio of the amount of water to the amount of methane is from 1.1 to 1.3; the reaction temperature is from 1 223 K to 1 273 K. The methane conversion rate is larger than 95% when the ratio of the amount of water to the amount of methane is 1.2 at a temperature above 1 223 K with the residence time up to 0.75 s.
基金National Natural Science Foundation of China(No.22272149,22062025)Yunnan University’s Research Innovation Fund for Graduate Students(No.KC-23234085)+1 种基金Workstation of Academician Chen Jing of Yunnan Province(No.202105AF150012)Free Exploration Fund for Academician(No.202405AA350001)。
文摘Electrocatalytic conversion of renewable biomass is emerging as a promising route for sustainable chemical production;hence it urgently calls for developing efficient electrocatalysts with low potentials and high current densities.Herein,a Pr-doped Co(OH)_(2)hexagonal sheet(Pr/Co=1/9,in mole)is synthesized by electrodeposition as highly performant catalyst for 5-hydroxymethylfurfural(HMF)oxidation reaction(HMFOR)to produce 2,5-furandicarboxylic acid(FDCA).This novel and low-cost catalyst possesses a rather low onset potential of 1.05 V(vs.RHE)and requires only 1.10 V(vs.RHE)to reach a current density of 10 mA cm^(-2)for HMFOR,significantly outperforming Co(OH)_(2)benchmark(i.e.,210 mV higher to reach10 m A cm^(-2)).The origin of Pr promotion effect as well as the evolution of CoOOH catalytic sites and HMFOR process has been deeply elucidated by physical characterizations,kinetic experiments,in situ electrochemical techniques,and theoretical calculations.The unique Pr-ameliorated CoOOH active centers enable 100%conversion of HMF,99.6%selectivity of FDCA,and 99.7%Faraday efficiency,with a superior cycling durability toward HMFOR.This can be one of the most outstanding results for Co-based HMFOR catalysts to date in the literature.Thereby this work can help open up new horizons for constructing novel and efficient Co-based electrocatalysts by the utilization of lanthanide elements.
基金National Natural Science Foundation of China(Grant Nos.61565008 and 61205205)the General Program of Yunnan Applied Basic Research Project,China(Grant No.2016FB009).
文摘Inhibiting the radiative radiation is an efficient approach to enhance quantum yields in a solar sell.This work carries out the inhibition of radiative recombination rate(RRR)in a quantum photocell with two coupled donors.We perform explicit calculations of the transition rates,energy gaps and the absorbed solar wavelength-dependent RRR,and find that two different regimes play the crucial roles in inhibiting RRR.One is the quantum coherence generated from two different transition channels,the other includes the absorbed photon wavelength and gaps between the donor and acceptor in this proposed photocell model.The results imply that there may be some efficient ways to enhance the photoelectron conversion compared to the classic solar cell.
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
