Dimensional analysis and numerical simulations were carried out to research prediction method of breakthrough time of horizontal wells in bottom water reservoir. Four dimensionless independent variables and dimensionl...Dimensional analysis and numerical simulations were carried out to research prediction method of breakthrough time of horizontal wells in bottom water reservoir. Four dimensionless independent variables and dimensionless time were derived from 10 influencing factors of the problem by using dimensional analysis. Simulations of horizontal well in reservoir with bottom water were run to find the prediction correlation. A general and concise functional relationship for predicting breakthrough time was established based on simulation results and theoretical analysis. The breakthrough time of one conceptual model predicted by the correlation is very close to the result by Eclipse with less than 2% error. The practical breakthrough time of one well in Helder oilfield is 10 d, and the predicted results by the method is 11.2 d, which is more accurate than the analytical result. Case study indicates that the method could predict breakthrough time of horizontal well under different reservoir conditions accurately. For its university and ease of use, the method is suitable for quick prediction of breakthrough time.展开更多
The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with ...The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.展开更多
基金Project(2011ZX05009-004)supported by the National Science and Technology Major Projects of China
文摘Dimensional analysis and numerical simulations were carried out to research prediction method of breakthrough time of horizontal wells in bottom water reservoir. Four dimensionless independent variables and dimensionless time were derived from 10 influencing factors of the problem by using dimensional analysis. Simulations of horizontal well in reservoir with bottom water were run to find the prediction correlation. A general and concise functional relationship for predicting breakthrough time was established based on simulation results and theoretical analysis. The breakthrough time of one conceptual model predicted by the correlation is very close to the result by Eclipse with less than 2% error. The practical breakthrough time of one well in Helder oilfield is 10 d, and the predicted results by the method is 11.2 d, which is more accurate than the analytical result. Case study indicates that the method could predict breakthrough time of horizontal well under different reservoir conditions accurately. For its university and ease of use, the method is suitable for quick prediction of breakthrough time.
基金National Natural Science Foundation of China(61974116)。
文摘The electrostatic discharge(ESD)protection circuit widely exists in the input and output ports of CMOS digital circuits,and fast rising time electromagnetic pulse(FREMP)coupled into the device not only interacts with the CMOS circuit,but also acts on the protection circuit.This paper establishes a model of on-chip CMOS electrostatic discharge protection circuit and selects square pulse as the FREMP signals.Based on multiple physical parameter models,it depicts the distribution of the lattice temperature,current density,and electric field intensity inside the device.At the same time,this paper explores the changes of the internal devices in the circuit under the injection of fast rising time electromagnetic pulse and describes the relationship between the damage amplitude threshold and the pulse width.The results show that the ESD protection circuit has potential damage risk,and the injection of FREMP leads to irreversible heat loss inside the circuit.In addition,pulse signals with different attributes will change the damage threshold of the circuit.These results provide an important reference for further evaluation of the influence of electromagnetic environment on the chip,which is helpful to carry out the reliability enhancement research of ESD protection circuit.
