Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals ...Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.展开更多
基金Project(20123227120021)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of ChinaProject(BK2012156)supported by the Natural Science Foundation of Jiangsu Province,China+3 种基金Project(KFJJ201105)supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(CJ20125001)supported by the Application Program for Basic Research of Changzhou,ChinaProject(13KJB430006)supported by the Universities Natural Science Research project of Jiangsu Province,ChinaProject supported by the Industrial Center of Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Microstructure and electrical properties of La2 O3-doped ZnO-Bi2 O3 thin films prepared by sol–gel process have been investigated.X-ray diffraction shows that most diffraction peaks of ZnO are equal,and the crystals of ZnO grow well.Scanning electron microscopy and atomic force microscopy results indicate that the samples have a good structure and lower surface roughness.The nonlinear V–I characteristics of the films show that La2 O3 develops the electrical properties largely and the best doped content is 0.3% lanthanum ion,with the leakage current of 0.25 mA,the threshold field of 150 V/mm and the nonlinear coefficient of 4.0 in detail.
