Open U-shaped steel arch supports are commonly used in large-section static-pressure roadways in coal mines that are more than 900 m deep;however,it is very difficult to control floor heave of roadways.In this paper,a...Open U-shaped steel arch supports are commonly used in large-section static-pressure roadways in coal mines that are more than 900 m deep;however,it is very difficult to control floor heave of roadways.In this paper,a U-shaped steel closed support with an inverted U-shaped steel arch in the floor is proposed as a method for improving the support effect of the surrounding rock during the process of floor heaving.This research established a mechanical model for the U-shaped steel closed support,and determined the reaction forces at the connection of a camber angle.Using the limit load method calculated the critical buckling load of the inverted U-shaped steel arch,and use of a strength check method tested the strength of the U-shaped steel material.A numerical simulation was conducted using the finite difference software FLAC3 D.The simulation results show that the U-shaped steel closed support is able to control the floor heave of roadways,which is successfully used in the West 11-2 development roadway of the Zhuji Mine in the Huainan mining area in China.The cumulative floor heave over two years was less than50 mm.展开更多
An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and inve...An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and investigated by simulation. There are two key features in the proposed device： one is a U-shaped gate around the oxide trench, which extends from source to drain （UG LDMOS）; the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field （E-field） strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ.cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS （CT LDMOS）, realizing the state-of-the-art trade-off between BV and Ron,sp.展开更多
An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the...An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region （UG MOSFET）. In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between R p and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ·cm^2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level展开更多
The fast and convenient demultiplex of optical vortex(OV) mode is crucial for its further application. We propose a novel approach that combines classic Young's doublet with an OV source to effectively identify th...The fast and convenient demultiplex of optical vortex(OV) mode is crucial for its further application. We propose a novel approach that combines classic Young's doublet with an OV source to effectively identify the OV mode through the analysis of interference patterns. The interference patterns of the OV source incident on the double slits can be perfectly illustrated by using both the classical double-slit interference method and the Huygens–Fresnel principle. The interference fringes will twist along the negative or positive direction of x axis when topological charge(TC)l>0 or l<0, and the degree of the movement varies with the TC, allowing for a quantitative display of the OV characteristics through the interference patterns. Additionally, we deduce analytically that the zeroth-order interference fringe has a linear relationship with the TC and the vertical position. These findings highlight the ability to identify the OV mode by analyzing the interference patterns produced by Young's doublet.展开更多
It is acknowledged that injecting CO_(2) into oil reservoirs and saline aquifers for storage is a practical and affordable method for CO_(2) sequestration.Most CO_(2) produced from industrial exhaust contains impurity...It is acknowledged that injecting CO_(2) into oil reservoirs and saline aquifers for storage is a practical and affordable method for CO_(2) sequestration.Most CO_(2) produced from industrial exhaust contains impurity gases such as H_(2)S that might impact CO_(2) sequestration due to competitive adsorption.This study makes a commendable effort to explore the adsorption behavior of CO_(2)/H_(2)S mixtures in calcite slit nanopores.Grand Canonical Monte Carlo(GCMC)simulation is employed to reveal the adsorption of CO_(2),H_(2)S as well as their binary mixtures in calcite nanopores.Results show that the increase in pressure and temperature can promote and inhibit the adsorption capacity of CO_(2) and H_(2)S in calcite nanopores,respectively.CO_(2)exhibits stronger adsorption on calcite surface than H_(2)S.Electrostatic energy plays the dominating role in the adsorption behavior.Electrostatic energy accounts for 97.11%of the CO_(2)-calcite interaction energy and 56.33%of the H_(2)S-calcite interaction energy at 10 MPa and 323.15 K.The presence of H_(2)S inhibits the CO_(2) adsorption in calcite nanopores due to competitive adsorption,and a higher mole fraction of H_(2)S leads to less CO_(2) adsorption.The quantity of CO_(2) adsorbed is lessened by approximately 33%when the mole fraction of H_(2)S reaches 0.25.CO_(2) molecules preferentially occupy the regions near the po re wall and H_(2)S molecules tend to reside at the center of nanopore even when the molar ratio of CO_(2) is low,indicating that CO_(2) has an adsorption priority on the calcite surface over H_(2)S.In addition,moisture can weaken the adsorption of both CO_(2) and H_(2)S,while CO_(2) is more affected.More interestingly,we find that pure CO_(2) is more suitable to be sequestrated in the shallower formations,i.e.,500-1500 m,whereas CO_(2)with H_(2)S impurity should be settled in the deeper reservoirs.展开更多
Cone-beam computed tornography （CBCT） has the notable features of high efficiency and high precision, and is widely used in areas such as medical imaging and industrial non-destructive testing. However, the presence...Cone-beam computed tornography （CBCT） has the notable features of high efficiency and high precision, and is widely used in areas such as medical imaging and industrial non-destructive testing. However, the presence of the ray scatter reduces the quality of CT images. By referencing the slit collimation approach, a scatter correction method for CBCT based on the interlacing-slit scan is proposed. Firstly, according to the characteristics of CBCT imaging, a scatter suppression plate with interlacing slits is designed and fabricated. Then the imaging of the scatter suppression plate is analyzed, and a scatter correction Calculation method for CBCT based on the image fusion is proposed, which can splice out a complete set of scatter suppression projection images according to the interlacing-slit projection images of the left and the right imaging regions in the scatter suppression plate, and simultaneously complete the scatter correction within the fiat panel detector （FPD）. Finally, the overall process of scatter suppression and correction is provided. The experimental results show that this method can significantly improve the clarity of the slice images and achieve a good scatter correction.展开更多
基金provided by the National Natural Science Foundation of China(No.51404256)the National Basic Research Program of China(No.2013CB227900)Fundamental Research Funds for the Central Universities of China(No. 2014QNA51)
文摘Open U-shaped steel arch supports are commonly used in large-section static-pressure roadways in coal mines that are more than 900 m deep;however,it is very difficult to control floor heave of roadways.In this paper,a U-shaped steel closed support with an inverted U-shaped steel arch in the floor is proposed as a method for improving the support effect of the surrounding rock during the process of floor heaving.This research established a mechanical model for the U-shaped steel closed support,and determined the reaction forces at the connection of a camber angle.Using the limit load method calculated the critical buckling load of the inverted U-shaped steel arch,and use of a strength check method tested the strength of the U-shaped steel material.A numerical simulation was conducted using the finite difference software FLAC3 D.The simulation results show that the U-shaped steel closed support is able to control the floor heave of roadways,which is successfully used in the West 11-2 development roadway of the Zhuji Mine in the Huainan mining area in China.The cumulative floor heave over two years was less than50 mm.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)the Program for New Century Excellent Talents at the University of Ministry of Education of China(Grant No.NCET-11-0062)
文摘An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and investigated by simulation. There are two key features in the proposed device： one is a U-shaped gate around the oxide trench, which extends from source to drain （UG LDMOS）; the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field （E-field） strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ.cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS （CT LDMOS）, realizing the state-of-the-art trade-off between BV and Ron,sp.
基金Supported by the National Natural Science Foundation of China under Grant No 61376079the Fundamental Research Funds for the Central Universities under Grant No ZYGX2013J043
文摘An ultralow specific on-resistance （Ron,sp） trench metal-oxide-semiconductor field effect transistor （MOSFET） with an improved off-state breakdown voltage （BV） is proposed. It features a U-shaped gate around the drift region and an oxide trench inserted in the drift region （UG MOSFET）. In the on-state, the U-shaped gate induces a high density electron accumulation layer along its sidewall, which provides a low-resistance current path from the source to the drain, realizing an ultralow Ron,sp. The value of Ron,sp is almost independent of the drift doping concentration, and thus the UG MOSFET breaks through the contradiction relationship between R p and the off-state BV. Moreover, the oxide trench folds the drift region, enabling the UG MOSFET to support a high BV with a shortened cell pitch. The UG MOSFET achieves an Ron,sp of 2 mΩ·cm^2 and an improved BV of 216 V, superior to the best existing state-of-the-art transistors at the same BV level
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2020YFA0710100 and 2023YFA1407100)the National Natural Science Foundation of China (Grant Nos.92050102 and 12374410)+2 种基金the Jiangxi Provincial Natural Science Foundation (Grant No.20224ACB201005)the Fundamental Research Funds for the Central Universities (Grant Nos.20720230102 and 20720220033)China Scholarship Council (Grant No.202206310009)。
文摘The fast and convenient demultiplex of optical vortex(OV) mode is crucial for its further application. We propose a novel approach that combines classic Young's doublet with an OV source to effectively identify the OV mode through the analysis of interference patterns. The interference patterns of the OV source incident on the double slits can be perfectly illustrated by using both the classical double-slit interference method and the Huygens–Fresnel principle. The interference fringes will twist along the negative or positive direction of x axis when topological charge(TC)l>0 or l<0, and the degree of the movement varies with the TC, allowing for a quantitative display of the OV characteristics through the interference patterns. Additionally, we deduce analytically that the zeroth-order interference fringe has a linear relationship with the TC and the vertical position. These findings highlight the ability to identify the OV mode by analyzing the interference patterns produced by Young's doublet.
基金financial support from the National Natural Science Foundation of China (Grant No.52004320)the Science Foundation of China University of Petroleum,Beijing (No.2462021QNXZ012,No.2462022BJRC001,and No.2462021YJRC012)the funding from the State Key Laboratory of Petroleum Resources and Engineering (No.PRP/indep-1-2103)。
文摘It is acknowledged that injecting CO_(2) into oil reservoirs and saline aquifers for storage is a practical and affordable method for CO_(2) sequestration.Most CO_(2) produced from industrial exhaust contains impurity gases such as H_(2)S that might impact CO_(2) sequestration due to competitive adsorption.This study makes a commendable effort to explore the adsorption behavior of CO_(2)/H_(2)S mixtures in calcite slit nanopores.Grand Canonical Monte Carlo(GCMC)simulation is employed to reveal the adsorption of CO_(2),H_(2)S as well as their binary mixtures in calcite nanopores.Results show that the increase in pressure and temperature can promote and inhibit the adsorption capacity of CO_(2) and H_(2)S in calcite nanopores,respectively.CO_(2)exhibits stronger adsorption on calcite surface than H_(2)S.Electrostatic energy plays the dominating role in the adsorption behavior.Electrostatic energy accounts for 97.11%of the CO_(2)-calcite interaction energy and 56.33%of the H_(2)S-calcite interaction energy at 10 MPa and 323.15 K.The presence of H_(2)S inhibits the CO_(2) adsorption in calcite nanopores due to competitive adsorption,and a higher mole fraction of H_(2)S leads to less CO_(2) adsorption.The quantity of CO_(2) adsorbed is lessened by approximately 33%when the mole fraction of H_(2)S reaches 0.25.CO_(2) molecules preferentially occupy the regions near the po re wall and H_(2)S molecules tend to reside at the center of nanopore even when the molar ratio of CO_(2) is low,indicating that CO_(2) has an adsorption priority on the calcite surface over H_(2)S.In addition,moisture can weaken the adsorption of both CO_(2) and H_(2)S,while CO_(2) is more affected.More interestingly,we find that pure CO_(2) is more suitable to be sequestrated in the shallower formations,i.e.,500-1500 m,whereas CO_(2)with H_(2)S impurity should be settled in the deeper reservoirs.
基金supported by the National Science and Technology Major Project of the Ministry of Industry and Information Technology of China(Grant No.2012ZX04007021)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51105315)+1 种基金the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2013JM7003)the Northwestern Polytechnical University Foundation for Fundamental Research,China(Grant Nos.3102014KYJD022 and JC20120226)
文摘Cone-beam computed tornography （CBCT） has the notable features of high efficiency and high precision, and is widely used in areas such as medical imaging and industrial non-destructive testing. However, the presence of the ray scatter reduces the quality of CT images. By referencing the slit collimation approach, a scatter correction method for CBCT based on the interlacing-slit scan is proposed. Firstly, according to the characteristics of CBCT imaging, a scatter suppression plate with interlacing slits is designed and fabricated. Then the imaging of the scatter suppression plate is analyzed, and a scatter correction Calculation method for CBCT based on the image fusion is proposed, which can splice out a complete set of scatter suppression projection images according to the interlacing-slit projection images of the left and the right imaging regions in the scatter suppression plate, and simultaneously complete the scatter correction within the fiat panel detector （FPD）. Finally, the overall process of scatter suppression and correction is provided. The experimental results show that this method can significantly improve the clarity of the slice images and achieve a good scatter correction.
