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Anode oxidation of HCHO in THPED-containing electroless copper plating solution 被引量:1
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作者 郑雅杰 肖发新 +1 位作者 邹伟红 王勇 《Journal of Central South University of Technology》 EI 2008年第5期669-673,共5页
The electrochemical mechanism of anode oxidation of HCHO in electroless copper plating solution with N, N, N′, N′-tetrakis(2-hydroxypropyl)ethylenediamine (THPED) was investigated by measuring cyclic voltammetry cur... The electrochemical mechanism of anode oxidation of HCHO in electroless copper plating solution with N, N, N′, N′-tetrakis(2-hydroxypropyl)ethylenediamine (THPED) was investigated by measuring cyclic voltammetry curves and anodic polarization curves. Three different oxidation peaks occur at the potentials of -0.62 V (Peak 1), -0.40 V (Peak 2) and -0.17 V (Peak 3) in the anode oxidation process of THPED-containing solution. The reaction at Peak 1, a main oxidation reaction, is the irreversible reaction of adsorbed HCHO with hydrogen evolution. The reaction at Peak 2, a secondary oxidation reaction, is the quasi-reversible reaction of adsorbed HCHO without hydrogen evolution. The reaction at Peak 3 is the irreversible oxidation of anode copper. The current density of Peak 1 increases gradually, that of Peak 2 remains constant and that of Peak 3 decreases with the increase of HCHO concentration. The current density of Peak 3 increases with the increase of THPED concentration and the complexation of THPED promotes the dissolution of anode copper. 展开更多
关键词 electroless copper plating anode oxidation thped HCHO electrochemical mechanism
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四羟丙基乙二胺/柠檬酸钠双络合体系的镁合金MAO层化学镀铜研究
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作者 晁盛远 陈源 《热加工工艺》 北大核心 2025年第17期161-166,173,共7页
为了改善镁合金微弧氧化层(MAO)的导电性能,以次亚磷酸钠为还原剂,柠檬酸钠为主络合剂,四羟丙基乙二胺(THPED)为添加剂,在AZ31B镁合金MAO陶瓷层上制备了化学镀铜层。利用SEM、XRD、EDS、电化学试验及四探针测试等手段研究了复合膜层的... 为了改善镁合金微弧氧化层(MAO)的导电性能,以次亚磷酸钠为还原剂,柠檬酸钠为主络合剂,四羟丙基乙二胺(THPED)为添加剂,在AZ31B镁合金MAO陶瓷层上制备了化学镀铜层。利用SEM、XRD、EDS、电化学试验及四探针测试等手段研究了复合膜层的微观结构、相组成、导电性和反应过程。结果表明:镀铜层的沉积速率随着THPED占比的增加呈现先增大后减小的趋势。络合剂的最佳配比为柠檬酸钠16 g/L、THPED 4g/L,此时铜镀层与MAO层紧密结合,电阻率为4.89×10^(-3)mΩ·cm。电化学结果显示,镍离子的加入会促进铜离子还原反应的进行,THPED占比较小时会促进还原反应的进行,但当THPED超过4 g/L时,会对还原反应起到抑制作用。 展开更多
关键词 镁合金 微弧氧化层 化学镀铜 四羟丙基乙二胺(thped)
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