Tin-lead(Sn-Pb)mixed perovskites are extensively investigated in near-infrared(NIR)photodetectors(PDs)owing to their excellent photoelectric performance.However,achieving high-performance Sn-Pb mixed PDs remains chall...Tin-lead(Sn-Pb)mixed perovskites are extensively investigated in near-infrared(NIR)photodetectors(PDs)owing to their excellent photoelectric performance.However,achieving high-performance Sn-Pb mixed PDs remains challenging,primarily because of the rapid crystallization and the susceptibility of Sn^(2+) to oxidation.To ad⁃dress these issues,this study introduces the multifunctional molecules 2,3-difluorobenzenamine(DBM)to modulate the crystallization of Sn-Pb mixed perovskites and retard the oxidation of Sn^(2+),thereby significantly enhancing film quality.Compared with the pristine film,Sn-Pb mixed perovskite films modulated by DBM molecules exhibit a high⁃ly homogeneous morphology,reduced roughness and defect density.The self-powered NIR PDs fabricated with the improved films have a spectral response range from 300 nm to 1100 nm,a peak responsivity of 0.51 A·W^(-1),a spe⁃cific detectivity as high as 2.46×10^(11)Jones within the NIR region(780 nm to 1100 nm),a linear dynamic range ex⁃ceeding 152 dB,and ultrafast rise/fall time of 123/464 ns.Thanks to the outstanding performance of PDs,the fabri⁃cated 5×5 PDs array demonstrates superior imaging ability in the NIR region up to 980 nm.This work advances the development of Sn-Pb mixed perovskites for NIR detection and paves the way for their commercialization.展开更多
Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective al...Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.展开更多
Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application ...Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photo...In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.展开更多
A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground stat...A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.展开更多
The effect of resonant cavity structure on the performance operation of In As/Ga As quantum ring intersubband photodetector is studied for detection of terahertz radiations range.In order to confinement of optical fie...The effect of resonant cavity structure on the performance operation of In As/Ga As quantum ring intersubband photodetector is studied for detection of terahertz radiations range.In order to confinement of optical field w ithin active region and consequently enhancement in responsivity of device,tw o periods of Al2O3/Ga As distributed bragg reflectors are used as bottom dielectric mirror and a thin layer of Au material as top mirror of device.For further improvement in detectivity,Al0.3Ga0.7As/In0.3Ga0.7As resonant tunneling barriers are included in absorption layers to reduce dark current of device.Proposed photodetector show s a peak responsivity of about 0.4(A/W)and quantum efficiency of 1.2%at the w avelength of 80μm(3.75 THz).Furthermore,specific detectivity(D*)of device is calculated and results are compared to conventional quantum ring inter-subband photodetector.Results predict a D*of^1011(cm.Hz1/2/W)for device at T=80 K and V=0.4 V w hich is tw o orders of magnitude higher than that of conventional QRIPs.展开更多
In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors gra...In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.展开更多
This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃...This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.展开更多
基金Supported by National Key Research and Development Program of China(2022YFA1404201)National Natural Science Foundation of China(62205187,U23A20380,U22A2091,62222509,62127817,62075120)+3 种基金Changjiang Scholars and Innovative Research Team in University of Ministry of Education of China(IRT_17R70)Fundamental Research Program of Shanxi Province(202103021223032,202303021222031)Project Funded by China Postdoctoral Science Foundation(2022M722006)Fund for Shanxi“1331 Project”Key Subjects Construction。
文摘Tin-lead(Sn-Pb)mixed perovskites are extensively investigated in near-infrared(NIR)photodetectors(PDs)owing to their excellent photoelectric performance.However,achieving high-performance Sn-Pb mixed PDs remains challenging,primarily because of the rapid crystallization and the susceptibility of Sn^(2+) to oxidation.To ad⁃dress these issues,this study introduces the multifunctional molecules 2,3-difluorobenzenamine(DBM)to modulate the crystallization of Sn-Pb mixed perovskites and retard the oxidation of Sn^(2+),thereby significantly enhancing film quality.Compared with the pristine film,Sn-Pb mixed perovskite films modulated by DBM molecules exhibit a high⁃ly homogeneous morphology,reduced roughness and defect density.The self-powered NIR PDs fabricated with the improved films have a spectral response range from 300 nm to 1100 nm,a peak responsivity of 0.51 A·W^(-1),a spe⁃cific detectivity as high as 2.46×10^(11)Jones within the NIR region(780 nm to 1100 nm),a linear dynamic range ex⁃ceeding 152 dB,and ultrafast rise/fall time of 123/464 ns.Thanks to the outstanding performance of PDs,the fabri⁃cated 5×5 PDs array demonstrates superior imaging ability in the NIR region up to 980 nm.This work advances the development of Sn-Pb mixed perovskites for NIR detection and paves the way for their commercialization.
基金Supported by National Key Research and Development Program in the 14th five year plan(2021YFA1200700)Strategic Priority Re⁃search Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62025405,62104235,62105348).
文摘Colloidal quantum dots(CQDs)are affected by the quantum confinement effect,which makes their bandgap tunable.This characteristic allows these materials to cover a broader infrared spectrum,providing a costeffective alternative to traditional infrared detector technology.Recently,thanks to the solution processing properties of quantum dots and their ability to integrate with silicon-based readout circuits on a single chip,infrared detectors based on HgTe CQDs have shown great application prospects.However,facing the challenges of vertically stacked photovoltaic devices,such as barrier layer matching and film non-uniformity,most devices integrated with readout circuits still use a planar structure,which limits the efficiency of light absorption and the effective separation and collection of photo-generated carriers.Here,by synthesizing high-quality HgTe CQDs and precisely controlling the interface quality,we have successfully fabricated a photovoltaic detector based on HgTe and ZnO QDs.At a working temperature of 80 K,this detector achieved a low dark current of 5.23×10^(-9)A cm^(-2),a high rectification ratio,and satisfactory detection sensitivity.This work paves a new way for the vertical integration of HgTe CQDs on silicon-based readout circuits,demonstrating their great potential in the field of high-performance infrared detection.
基金Supported by the National Key Research and Development Program of China(2021YFB2012601)National Natural Science Foundation of China(12204109)+1 种基金Science and Technology Innovation Plan of Shanghai Science and Technology Commission(21JC1400200)Higher Education Indus⁃try Support Program of Gansu Province(2022CYZC-06)。
文摘Organic semiconductor materials have shown unique advantages in the development of optoelectronic devices due to their ease of preparation,low cost,lightweight,and flexibility.In this work,we explored the application of the organic semiconductor Y6-1O single crystal in photodetection devices.Firstly,Y6-1O single crystal material was prepared on a silicon substrate using solution droplet casting method.The optical properties of Y6-1O material were characterized by polarized optical microscopy,fluorescence spectroscopy,etc.,confirming its highly single crystalline performance and emission properties in the near-infrared region.Phototransistors based on Y6-1O materials with different thicknesses were then fabricated and tested.It was found that the devices exhibited good visible to near-infrared photoresponse,with the maximum photoresponse in the near-infrared region at 785 nm.The photocurrent on/off ratio reaches 10^(2),and photoresponsivity reaches 16 mA/W.It was also found that the spectral response of the device could be regulated by gate voltage as well as the material thickness,providing important conditions for optimizing the performance of near-infrared photodetectors.This study not only demonstrates the excellent performance of organic phototransistors based on Y6-1O single crystal material in near-infrared detection but also provides new ideas and directions for the future development of infrared detectors.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
基金National Natural Science Foundation of China(62074056)Fundamental Research Funds for the Central Universities。
文摘In recent years,copper iodide(CuI)is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility,high optical absorption and large exciton binding energy.However,the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices,which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors.In this study,a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method.Although the CuI thin film is polycrystalline with obvious structural defects,the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10^(4),indicating a good defect tolerance.This is because of the unilateral heterojunction behavior of the formation of the p^(+)n diode.In this work,the mechanism of photocurrent of the p^(+)n diode has been studied comprehensively.Different monochromatic lasers with wavelengths of 400,505,635 and 780 nm have been selected for testing the photoresponse.Under zero-bias voltage,the device is a unilateral heterojunction,and only visible light can be absorbed at the Si side.On the other hand,when a bias voltage of-3 V is applied,the photodiode is switched to a broader“UV-visible”band response mode.Therefore,the detection wavelength range can be switched between the“Visible”and“UV-visible”bands by adjusting the bias voltage.Moreover,the obtained CuI/Si diode was very sensitive to weak light illumination.A very high detectivity of 10^(13)-1014 Jones can be achieved with a power density as low as 0.5μW/cm^(2),which is significantly higher than that of other Cu-based diodes.These findings underscore the high application potential of CuI when integrated with the traditional Si industry.
文摘A complete quantum mechanical model for GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) was presented. The photocurrent was investigated by the optical transition(absorption coefficient)between the ground state and the excited states due to the nonzero component of the radiation field along the sample growth direction. By studying the inter diffusion of the Al atoms across the GaAs/AlGaAs heterointer faces, the mobility of the drift diffusion carriers in the excited states was calculated. As a result, the measurement results of the dark current and the photocurrent spectra are explained theoretically.
文摘The effect of resonant cavity structure on the performance operation of In As/Ga As quantum ring intersubband photodetector is studied for detection of terahertz radiations range.In order to confinement of optical field w ithin active region and consequently enhancement in responsivity of device,tw o periods of Al2O3/Ga As distributed bragg reflectors are used as bottom dielectric mirror and a thin layer of Au material as top mirror of device.For further improvement in detectivity,Al0.3Ga0.7As/In0.3Ga0.7As resonant tunneling barriers are included in absorption layers to reduce dark current of device.Proposed photodetector show s a peak responsivity of about 0.4(A/W)and quantum efficiency of 1.2%at the w avelength of 80μm(3.75 THz).Furthermore,specific detectivity(D*)of device is calculated and results are compared to conventional quantum ring inter-subband photodetector.Results predict a D*of^1011(cm.Hz1/2/W)for device at T=80 K and V=0.4 V w hich is tw o orders of magnitude higher than that of conventional QRIPs.
基金Supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB0580000)Natural Science Foundation of China(62222413,62025405,62105100,62075228 and 62334001)+1 种基金Natural Science Foundation of Shanghai(23ZR1473400)Hundred Talents Program of the Chinese Academy of Sciences。
文摘In the realm of optoelectronics,photodetectors play pivotal roles,with applications spanning from high-speed data communication to precise environmental sensing.Despite the advancements,conventional photodetectors grapple with challenges with response speed and dark current.In this study,we present a photodetector based on a lateral MoTe_(2)p-n junction,defined by a semi-floating ferroelectric gate.The strong ferroelectric fields and the depletion region of the p-n junction in the device are notably compact,which diminish the carrier transit time,thereby enhancing the speed of the photoelectric response.The non-volatile MoTe_(2)homojunction,under the influence of external gate voltage pulses,can alter the orientation of the intrinsic electric field within the junction.As a photovoltaic detector,it achieves an ultra-low dark current of 20 pA,and a fast photo response of 2μs.The spectral response is extended to the shortwave infrared range at 1550 nm.Furthermore,a logic computing system with light/no light as binary input is designed to convert the current signal to the voltage output.This research not only underscores the versatility of 2D materials in the realm of sophisticated photodetector design but also heralds new avenues for their application in energy-efficient,high-performance optoelectronic devices.
文摘This study introduces a comprehensive theoretical framework for accurately calculating the electronic band-structure of strained long-wavelength InAs/GaSb type-Ⅱsuperlattices.Utilizing an eight-band k·p Hamilto⁃nian in conjunction with a scattering matrix method,the model effectively incorporates quantum confinement,strain effects,and interface states.This robust and numerically stable approach achieves exceptional agreement with experimental data,offering a reliable tool for analyzing and engineering the band structure of complex multi⁃layer systems.
