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Design and analysis of resonant cavity-enhanced quantum ring inter-subband photodetector with resonant tunneling barriers for terahertz detection

Design and analysis of resonant cavity-enhanced quantum ring inter-subband photodetector with resonant tunneling barriers for terahertz detection
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摘要 The effect of resonant cavity structure on the performance operation of In As/Ga As quantum ring intersubband photodetector is studied for detection of terahertz radiations range.In order to confinement of optical field w ithin active region and consequently enhancement in responsivity of device,tw o periods of Al2O3/Ga As distributed bragg reflectors are used as bottom dielectric mirror and a thin layer of Au material as top mirror of device.For further improvement in detectivity,Al0.3Ga0.7As/In0.3Ga0.7As resonant tunneling barriers are included in absorption layers to reduce dark current of device.Proposed photodetector show s a peak responsivity of about 0.4(A/W)and quantum efficiency of 1.2%at the w avelength of 80μm(3.75 THz).Furthermore,specific detectivity(D*)of device is calculated and results are compared to conventional quantum ring inter-subband photodetector.Results predict a D*of^1011(cm.Hz1/2/W)for device at T=80 K and V=0.4 V w hich is tw o orders of magnitude higher than that of conventional QRIPs. The effect of resonant cavity structure on the performance operation of InAs/GaAs quantum ring inter- subband photodetector is studied for detection of terahertz radiations range. In order to confinement of optical field within active region and consequently enhancement in responsivity of device, two periods of Al2O3/GaAs distributed bragg reflectors are used as bottom dielectric mirror and a thin layer of Au material as top mirror of device. For further improvement in detectivity, Al0.3 Ga0.7 As/ In0.3 Ga0.7 As resonant tunneling barriers are included in absorp- tion layers to reduce dark current of device. Proposed photodetector shows a peak responsivity of about 0.4 ( A/ W) and quantum efficiency of 1.2% at the wavelength of 80 μm (3.75 THz). Furthermore, specific detectivity (D * ) of device is calculated and results are compared to conventional quantum ring inter-subband photodetector. Results predict a D * of - 10^11 (cm. Hz^1/2/W) for device at T=80 K and V = 0.4 V which is two orders of magnitude hieher than that of conventional ORIPs.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2014年第6期571-576,共6页 Journal of Infrared and Millimeter Waves
关键词 量子环 理论研究 辐射范围 共振吸收层 quantum ring photodetector, resonant cavity, detecfivity, distributed bragg reflector, resonant tunne-ling barrier
作者简介 Mahdi Zavvari, male, Iran, PhD. Research fields focus on nanostructure based photodetectors, single photon avalanche photodiodes, and graphene based photodetectors. E-mail: m. zavvari@ iaurmia. ac. ir
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参考文献29

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