Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds.This tight bonding presents tremendous challenges in developing III-nitride membranes,even though semiconductor membran...Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds.This tight bonding presents tremendous challenges in developing III-nitride membranes,even though semiconductor membranes can provide numerous advantages by removing thick,inflexible,and costly substrates.Herein,cavities with various sizes were introduced by overgrowing target layers,such as undoped GaN and green LEDs,on nanoporous templates prepared by electrochemical etching of n-type GaN.The large primary interfacial toughness was effectively reduced according to the design of the cavity density,and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers.The resulting III-nitride membranes maintained high crystal quality even after exfoliation due to the use of GaN-based nanoporous templates with the same lattice constant.The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.展开更多
Deep-ultraviolet(DUV)disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019(COVID-19).However,the influences of viral variants(Delta and Omicron)and ...Deep-ultraviolet(DUV)disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019(COVID-19).However,the influences of viral variants(Delta and Omicron)and low temperatures on the DUV virucidal efficacy are still unknown.Here,we developed a reliable and uniform planar light source comprised of 275-nm light-emitting diodes(LEDs)to investigate the effects of these two unknown factors and delineated the principle behind different disinfection performances.We found the lethal effect of DUV at the same radiation dose was reduced by the cryogenic environment,and a negative-U large-relaxation model was used to explain the difference in view of the photoelectronic nature.The chances were higher in the cryogenic environment for the capture of excited electrons within active genetic molecules back to the initial photo-ionised positions.Additionally,the variant of Omicron required a significantly higher DUV dose to achieve the same virucidal efficacy,and this was thanks to the genetic and proteinic characteristics of the Omicron.The findings in this study are important for human society using DUV disinfection in cold conditions(e.g.,the food cold chain logistics and the open air in winter),and the relevant DUV disinfection suggestion against COVID-19 is provided.展开更多
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the c...We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.展开更多
Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dime...Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.展开更多
基金The work was supported by King Abdullah University of Science and Technology(KAUST)baseline funding BAS/1/1614-01-01 and King Abdulaziz City for Science and Technology(Grant No.KACST TIC R2-FP-008)This work was also supported by Korea Photonics Technology Institute(Project No.193300029).
文摘Epitaxially grown III-nitride alloys are tightly bonded materials with mixed covalent-ionic bonds.This tight bonding presents tremendous challenges in developing III-nitride membranes,even though semiconductor membranes can provide numerous advantages by removing thick,inflexible,and costly substrates.Herein,cavities with various sizes were introduced by overgrowing target layers,such as undoped GaN and green LEDs,on nanoporous templates prepared by electrochemical etching of n-type GaN.The large primary interfacial toughness was effectively reduced according to the design of the cavity density,and the overgrown target layers were then conveniently exfoliated by engineering tensile-stressed Ni layers.The resulting III-nitride membranes maintained high crystal quality even after exfoliation due to the use of GaN-based nanoporous templates with the same lattice constant.The microcavity-assisted crack propagation process developed for the current III-nitride membranes forms a universal process for developing various kinds of large-scale and high-quality semiconductor membranes.
基金supported by the National Key R&D Program of China(2022YFB3605002)the Key Scientific and Technological Program of Xiamen(3502Z20211002).
文摘Deep-ultraviolet(DUV)disinfection technology provides an expeditious and efficient way to suppress the transmission of coronavirus disease 2019(COVID-19).However,the influences of viral variants(Delta and Omicron)and low temperatures on the DUV virucidal efficacy are still unknown.Here,we developed a reliable and uniform planar light source comprised of 275-nm light-emitting diodes(LEDs)to investigate the effects of these two unknown factors and delineated the principle behind different disinfection performances.We found the lethal effect of DUV at the same radiation dose was reduced by the cryogenic environment,and a negative-U large-relaxation model was used to explain the difference in view of the photoelectronic nature.The chances were higher in the cryogenic environment for the capture of excited electrons within active genetic molecules back to the initial photo-ionised positions.Additionally,the variant of Omicron required a significantly higher DUV dose to achieve the same virucidal efficacy,and this was thanks to the genetic and proteinic characteristics of the Omicron.The findings in this study are important for human society using DUV disinfection in cold conditions(e.g.,the food cold chain logistics and the open air in winter),and the relevant DUV disinfection suggestion against COVID-19 is provided.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60676032,60776041,60976009 and U0834001)the National Basic Research program of China(Grant No.2007CB307004)
文摘We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/（V· s） and 460 Ω/respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electrolurninescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.
基金the National Key Research and Development Program of China(Grant No.2018YFB2202801)the National Natural Science Foundation of China(Grant No.12074369).
文摘Using first-principles calculations based on density functional theory,we have systematically studied the influence of in-plane lattice constant and thickness of slabs on the concentration and distribution of two-dimensional hole gas(2 DHG)in AlN/GaN superlattices.We show that the increase of in-plane lattice constant would increase the concentration of 2 DHG at interfaces and decrease the valence band offset,which may lead to a leak of current.Increasing the thickness of AlN and/or decreasing the thickness of GaN would remarkably strengthen the internal field in GaN layer,resulting in better confinement of 2 DHG at AlN/GaN interfaces.Therefore,a moderate larger in-plane lattice constant and thicker AlN layer could improve the concentration and confinement of 2 DHG at AlN/GaN interfaces.Our study could serve as a guide to control the properties of 2 DHG at Ⅲ-nitride interfaces and help to optimize the performance of p-type nitride-based devices.
