对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) ...对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。展开更多
The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attribute...The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.展开更多
文摘对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。
基金Supported by the Candidate Talents Training Fund of Yunnan Province(202205AC160054)the National Natural Science Foundation of China(62174156)。
文摘The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.
