摘要
在LiNbO3中掺进不同浓度的抗光折变杂质离子In3+,生长In(2mol% )∶LiN bO3和In(3mol% )∶LiNbO3晶体。研究In∶LiNbO3晶体的结构和In3+离子在LiNbO3晶体中的占位 ,利用光斑变形法和全息法测试了In∶LiNbO3晶体的抗光折变性能 。
Doping In 3+ with different concentrations in LiNbO 3, In(2mol%)∶LiNbO 3 and In(3mol%)∶LiNbO 3 crystals were grown. The structure of In∶LiNbO 3 crystals and the In 3+ site in LiNbO 3 crystals were studied. The photodamage resistance ability of In∶LiNbO 3 crystals was measured by observing transmitted speckle method and the holography method. The mechanism of the enhancement of photodamage resistance ability for In∶LiNbO 3 crystals was researched.
出处
《高技术通讯》
EI
CAS
CSCD
2001年第9期97-99,共3页
Chinese High Technology Letters
基金
973国家重大基础研究项目 (G19990 3 3 0 )
