The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logar...The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).展开更多
Numerical simulation and experimental study of the Vickers indentation testing of the Al2O3 ceramic coated by diamond-like carbon(DLC) layer were conducted.The numerical analysis was implemented by a two-dimensional f...Numerical simulation and experimental study of the Vickers indentation testing of the Al2O3 ceramic coated by diamond-like carbon(DLC) layer were conducted.The numerical analysis was implemented by a two-dimensional finite element(FE) axis symmetry model.FE analysis results gave insight into the fracture mechanism of DLC films coated on brittle ceramic(Al2O3) substrates.The maximum principal stress field was used to locate the most expected area for crack formation and propagation during the Vickers indentation testing.The results show that the median crack initiates in the interface under indenter,before ring crack occurs as the indenter presses down.Finally,the plastic deformation appears when the indenter penetrates into the substrate.The thicker DLC coating increases the Vickers hardness and fracture toughness.展开更多
Ni-Cr/h-BN self-lubricating composities were prepared by powder metallurgy (P/M) method.The effects of hexagonal boron nitride (h-BN) content on the mechanical and tribological properties of the Ni-Cr/h-BN composites ...Ni-Cr/h-BN self-lubricating composities were prepared by powder metallurgy (P/M) method.The effects of hexagonal boron nitride (h-BN) content on the mechanical and tribological properties of the Ni-Cr/h-BN composites were investigated.The corresponding frictional models were established to analyze the formation of the lubricant h-BN films on the surfaces of the Ni-Cr/h-BN composites.The results show that,when the content of h-BN increases from 5% to 15% (mass fraction),the bending strength of the Ni-Cr/h-BN composite decreases from 96.670 MPa to 17.319 MPa,and the hardness (HB) decreases from 33 to 14.The friction coefficient of the Ni-Cr/h-BN composite decreases firstly from 0.385 to 0.216,and then increases to 0.284,while the wear rate decreases firstly from 4.14×10-9 kg/(N·m) to 1.35×10-9 kg/(N·m),then increases to 2.36×10-9 kg/(N·m).The best comprehensive mechanical and tribological properties can be obtained between 10% and 12% h-BN addition.展开更多
Interfaces play critical roles in electronic devices and provide great diversity of film morphology and device performance.We retrospect the substrate mediated vacuum film growth of benchmark high mobility material 2,...Interfaces play critical roles in electronic devices and provide great diversity of film morphology and device performance.We retrospect the substrate mediated vacuum film growth of benchmark high mobility material 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT)and the interface electronic structures.The film growth of C8-BTBT molecules is diversified depending on the substrate-molecule and molecule-molecule interactions.On atomic smooth substrates C8-BTBT film grows in layer-by-layer mode while on coarse substrate it grows in islands mode.The initial molecular layer at dielectric,semiconductor and conductive substrates displays slight different lattice structure.The initial molecule orientation depends on the substrate and will gradually change to standing up configuration as in bulk phase.C8-BTBT behaves as electron donor when contacting with dielectric and stable conductive materials.This usually induces a dipole layer pointing to C8-BTBT and an upward bend bending in C8-BTBT side toward the interface.Although it is air stable,C8-BTBT is chemically reactive with some transition metals and compounds.The orientation change from lying down to standing up in the film usually leads to decrease of ionization potential.The article provides insights to the interface physical and chemical processes and suggestions for optimal design and fabrication of C8-BTBT based devices.展开更多
基金Project(11374094)supported by the National Natural Science Foundation of ChinaProject(2013HZX23)supported by Natural Science Foundation of Hunan University of Technology,ChinaProject(2015JJ3060)supported by Natural Science Foundation of Hunan Province of China
文摘The effect of the parameters on the open-circuit voltage, V_(OC) of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V_(OC) increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density(D_(it)) for the open-circuit voltage(V_(OC)), D_(it)^(crit,1) and D_(it)crit,2(a few 1010 cm^(-2)·e V^(-1)). V_(OC) decreases remarkably when D_(it) is higher than D_(it)^(crit,1). To achieve high V_(OC), the interface states should reduce down to a few 1010 cm^(-2)·e V^(-1). Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V_(OC) decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×10^(18) cm^(-3) to achieve high V_(OC).
文摘Numerical simulation and experimental study of the Vickers indentation testing of the Al2O3 ceramic coated by diamond-like carbon(DLC) layer were conducted.The numerical analysis was implemented by a two-dimensional finite element(FE) axis symmetry model.FE analysis results gave insight into the fracture mechanism of DLC films coated on brittle ceramic(Al2O3) substrates.The maximum principal stress field was used to locate the most expected area for crack formation and propagation during the Vickers indentation testing.The results show that the median crack initiates in the interface under indenter,before ring crack occurs as the indenter presses down.Finally,the plastic deformation appears when the indenter penetrates into the substrate.The thicker DLC coating increases the Vickers hardness and fracture toughness.
基金Project(MKPT-03-182) supported by the Ministry of Science and Technology of China
文摘Ni-Cr/h-BN self-lubricating composities were prepared by powder metallurgy (P/M) method.The effects of hexagonal boron nitride (h-BN) content on the mechanical and tribological properties of the Ni-Cr/h-BN composites were investigated.The corresponding frictional models were established to analyze the formation of the lubricant h-BN films on the surfaces of the Ni-Cr/h-BN composites.The results show that,when the content of h-BN increases from 5% to 15% (mass fraction),the bending strength of the Ni-Cr/h-BN composite decreases from 96.670 MPa to 17.319 MPa,and the hardness (HB) decreases from 33 to 14.The friction coefficient of the Ni-Cr/h-BN composite decreases firstly from 0.385 to 0.216,and then increases to 0.284,while the wear rate decreases firstly from 4.14×10-9 kg/(N·m) to 1.35×10-9 kg/(N·m),then increases to 2.36×10-9 kg/(N·m).The best comprehensive mechanical and tribological properties can be obtained between 10% and 12% h-BN addition.
基金Project(2017YFA0206602)supported in part by the National Key Research and Development Program of China。
文摘Interfaces play critical roles in electronic devices and provide great diversity of film morphology and device performance.We retrospect the substrate mediated vacuum film growth of benchmark high mobility material 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene(C8-BTBT)and the interface electronic structures.The film growth of C8-BTBT molecules is diversified depending on the substrate-molecule and molecule-molecule interactions.On atomic smooth substrates C8-BTBT film grows in layer-by-layer mode while on coarse substrate it grows in islands mode.The initial molecular layer at dielectric,semiconductor and conductive substrates displays slight different lattice structure.The initial molecule orientation depends on the substrate and will gradually change to standing up configuration as in bulk phase.C8-BTBT behaves as electron donor when contacting with dielectric and stable conductive materials.This usually induces a dipole layer pointing to C8-BTBT and an upward bend bending in C8-BTBT side toward the interface.Although it is air stable,C8-BTBT is chemically reactive with some transition metals and compounds.The orientation change from lying down to standing up in the film usually leads to decrease of ionization potential.The article provides insights to the interface physical and chemical processes and suggestions for optimal design and fabrication of C8-BTBT based devices.
