Broadband transparent films play a pivotal role in various applications such as lenses and solar cells,particularly porous structured transparent films exhibit significant potential.This study investigates a porous Si...Broadband transparent films play a pivotal role in various applications such as lenses and solar cells,particularly porous structured transparent films exhibit significant potential.This study investigates a porous SiO_(2) refractive index gradient anti-reflective film prepared by atomic layer deposition(ALD).A porous SiO_(2) film with gradual porosity was obtained by phosphoric acid etching of Al_(2)O_(3)/SiO_(2) multilayers with gradient Al2O3 ratios,achieving a gradual decrease in refractive index from the substrate to the surface.The film exhibited an average transmittance as high as 97.8%within the wavelength range from 320 nm to 1200 nm.The environmental adaptability was further enhanced by surface modification using rare earth oxide(REO)La_(2)O_(3),resulting in formation of a lotus leaf-like structure and achieving a water contact angle of 100.0°.These data proved that the modification significantly improved hydrophobic self-cleaning capability while maintaining exceptional transparency of the film.The surface structure of the modified film remained undamaged even after undergoing wipe testing,demonstrating its excellent surface durability.展开更多
The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the incre...The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF.Furthermore,the grain sizes of varistors were varied from 6.8μm to 9.8μm.The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900°C and fallen drastically to 410 V/mm for the sample sintered at 1050°C.In addition,there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm2.However,the density of the varistor decreased with an increase of temperature from 5.41 g/cm3 to 5.24 g/cm3.With this base,the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.展开更多
文摘Broadband transparent films play a pivotal role in various applications such as lenses and solar cells,particularly porous structured transparent films exhibit significant potential.This study investigates a porous SiO_(2) refractive index gradient anti-reflective film prepared by atomic layer deposition(ALD).A porous SiO_(2) film with gradual porosity was obtained by phosphoric acid etching of Al_(2)O_(3)/SiO_(2) multilayers with gradient Al2O3 ratios,achieving a gradual decrease in refractive index from the substrate to the surface.The film exhibited an average transmittance as high as 97.8%within the wavelength range from 320 nm to 1200 nm.The environmental adaptability was further enhanced by surface modification using rare earth oxide(REO)La_(2)O_(3),resulting in formation of a lotus leaf-like structure and achieving a water contact angle of 100.0°.These data proved that the modification significantly improved hydrophobic self-cleaning capability while maintaining exceptional transparency of the film.The surface structure of the modified film remained undamaged even after undergoing wipe testing,demonstrating its excellent surface durability.
文摘The microstructure and electrical properties of ZnO-Bi2O3-Yb2O3 based varistor ceramics were investigated with various temperature effects from 900°C to 1050°C.From the results,it was observed that the increase of sintering temperature offers a reduced capacitive effect from 0.460 nF to 0.321 nF.Furthermore,the grain sizes of varistors were varied from 6.8μm to 9.8μm.The consequence of such smaller grain sizes provided a better voltage gradient of about 895 V/mm for the disc sintered at 900°C and fallen drastically to 410 V/mm for the sample sintered at 1050°C.In addition,there was an increase of non-linearity index to a maximum value of 36.0 and reduced leakage current of 0.026 mA/cm2.However,the density of the varistor decreased with an increase of temperature from 5.41 g/cm3 to 5.24 g/cm3.With this base,the influence of varistor capacitance and high voltage gradient were scrutinized and it led an improved transition speed of the varistor assembly from non-conduction to conduction mode during intruding nanosecond transients.
