By numerically solving the two-dimensional semiconductor Bloch equation,we study the high-order harmonic emission of a monolayer ZnO under the driving of co-rotating two-color circularly polarized laser pulses.By chan...By numerically solving the two-dimensional semiconductor Bloch equation,we study the high-order harmonic emission of a monolayer ZnO under the driving of co-rotating two-color circularly polarized laser pulses.By changing the relative phase between the fundamental frequency field and the second one,it is found that the harmonic intensity in the platform region can be significantly modulated.In the higher order,the harmonic intensity can be increased by about one order of magnitude.Through time-frequency analysis,it is demonstrated that the emission trajectory of monolayer ZnO can be controlled by the relative phase,and the harmonic enhancement is caused by the second quantum trajectory with the higher emission probability.In addition,near-circularly polarized harmonics can be generated in the co-rotating two-color circularly polarized fields.With the change of the relative phase,the harmonics in the platform region can be altered from left-handed near-circularly polarization to right-handed one.Our results can obtain high-intensity harmonic radiation with an adjustable ellipticity,which provides an opportunity for syntheses of circularly polarized attosecond pulses.展开更多
The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout pr...The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.展开更多
We utilize the calculation of hierarchical equations of motion to demonstrate that the spin-dependent properties between adjacent quantum dots(QDs)can be changed by breaking the internal symmetry configuration,corresp...We utilize the calculation of hierarchical equations of motion to demonstrate that the spin-dependent properties between adjacent quantum dots(QDs)can be changed by breaking the internal symmetry configuration,corresponding to the inversion of dominant chiral states.In the linear triple quantum dots(LTQDs)connected to two electron reservoirs,we can observe that the blockage appears at the triangle triple quantum dots(TTQDs)by gradually increasing the coupling strength between next-nearest double QDs.When the initial coupling between LTQDs has altered,the internal chiral circulation also undergoes the corresponding transform,thus achieving qualitative regulation and detection of the blocking region.We also investigate the response of the chiral circulation to the dot–lead coupling strength,indicating the overall robust chiral circulation of the TTQDs frustration.展开更多
The formation of self assembled CdSe quantum dots under Stranski Krastanow (S K) mode by low pressure metalorganic chemical vapor deposition (LP MOCVD) was reported for the first time. The samples were grown directly ...The formation of self assembled CdSe quantum dots under Stranski Krastanow (S K) mode by low pressure metalorganic chemical vapor deposition (LP MOCVD) was reported for the first time. The samples were grown directly on GaAs (100) surfaces by LP MOCVD. DimethylSelenide (DMSe) and DimethylCadmium (DMCd) were used as precursors. The growth pressure was kept at 2 93×10 4Pa and the growth temperature was 500℃. CdSe with the thickness of about 2 monolayers was grown directly on GaAs (100) surfaces. For the purpose of AFM observation, this uncapped sample was cooled down immediately to room temperature and was monitored under a Digital Instruments Nanoscope Ⅲa system at the same day of growth. The AFM images show that the average diameter, height and density of those self assembled CdSe quantum dots are 50±15nm, 13±4nm and 5μm -2 , respectively. And those dots’ diameter height ratio is about 4～5, just the same as those results observed in other Ⅱ Ⅵ and Ⅲ Ⅵ compounds which were grown under S K mode by MBE.展开更多
制备了Mn掺杂Zn-In-S量子点并研究了Zn/In的量比和反应温度对其发光性质的影响。在Mn掺杂的Zn-In-S量子点的发光谱中观测到一个600 nm发光带。通过改变Zn/In的量比,掺杂量子点的吸收带隙可从3.76 e V(330 nm)调谐到2.82 e V(440 nm),但6...制备了Mn掺杂Zn-In-S量子点并研究了Zn/In的量比和反应温度对其发光性质的影响。在Mn掺杂的Zn-In-S量子点的发光谱中观测到一个600 nm发光带。通过改变Zn/In的量比,掺杂量子点的吸收带隙可从3.76 e V(330 nm)调谐到2.82 e V(440 nm),但600 nm发光峰的波长只有略微移动。这些掺杂量子点的最长荧光寿命为2.14 ms。当反应温度从200℃增加到230℃时,掺杂量子点的发光强度增加并达到最大值;而继续升高温度至260℃时,发光强度迅速减弱。此外,测量了Mn掺杂Zn-In-S量子点的变温发光光谱。发现随着温度的升高,发光峰位发生蓝移,发光强度明显下降。分析认为,Mn掺杂Zn-In-S量子点的600 nm发光来自于Mn2+离子的4T1和6A1之间的辐射复合。展开更多
利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :...利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 。展开更多
基金supported by the Zhejiang Provincial Natural Science Foundation of China(Grant Nos.Y23A040001 and LY21F050001)the National Key Research and Development Program of China(Grant No.2019YFA0307700),the National Natural Science Foundation of China(Grant Nos.12074145,11774219,11975012,12374029,12304378,and 12204214)+2 种基金the Jilin Provincial Research Foundation for Basic Research,China(Grant No.20220101003JC)the Foundation of Education Department of Liaoning Province,China(Grant No.LJKMZ20221435)the National College Students Innovation and Entrepreneurship Training Program(Grant No.202310350062).
文摘By numerically solving the two-dimensional semiconductor Bloch equation,we study the high-order harmonic emission of a monolayer ZnO under the driving of co-rotating two-color circularly polarized laser pulses.By changing the relative phase between the fundamental frequency field and the second one,it is found that the harmonic intensity in the platform region can be significantly modulated.In the higher order,the harmonic intensity can be increased by about one order of magnitude.Through time-frequency analysis,it is demonstrated that the emission trajectory of monolayer ZnO can be controlled by the relative phase,and the harmonic enhancement is caused by the second quantum trajectory with the higher emission probability.In addition,near-circularly polarized harmonics can be generated in the co-rotating two-color circularly polarized fields.With the change of the relative phase,the harmonics in the platform region can be altered from left-handed near-circularly polarization to right-handed one.Our results can obtain high-intensity harmonic radiation with an adjustable ellipticity,which provides an opportunity for syntheses of circularly polarized attosecond pulses.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.12074368,92165207,12034018,and 62004185)the Anhui Province Natural Science Foundation (Grant No.2108085J03)the USTC Tang Scholarship。
文摘The single-shot readout data process is essential for the realization of high-fidelity qubits and fault-tolerant quantum algorithms in semiconductor quantum dots. However, the fidelity and visibility of the readout process are sensitive to the choice of the thresholds and limited by the experimental hardware. By demonstrating the linear dependence between the measured spin state probabilities and readout visibilities along with dark counts, we describe an alternative threshold-independent method for the single-shot readout of spin qubits in semiconductor quantum dots. We can obtain the extrapolated spin state probabilities of the prepared probabilities of the excited spin state through the threshold-independent method. We then analyze the corresponding errors of the method, finding that errors of the extrapolated probabilities cannot be neglected with no constraints on the readout time and threshold voltage. Therefore, by limiting the readout time and threshold voltage, we ensure the accuracy of the extrapolated probability. We then prove that the efficiency and robustness of this method are 60 times larger than those of the most commonly used method. Moreover, we discuss the influence of the electron temperature on the effective area with a fixed external magnetic field and provide a preliminary demonstration for a single-shot readout of up to 0.7K/1.5T in the future.
基金supported by the National Natural Science Foundation of China(Grant Nos.12274454,11774418,11374363,11674317,11974348,11834014,and 21373191)the Strategic Priority Research Program of CAS(Grant Nos.XDB28000000 and XDB33000000)+2 种基金the National Natural Science Foundation of China(Grant No.11974348)the Training Program of Major Research Plan of NSFC(Grant No.92165105)the Outstanding Innovative Talents Cultivation Funded Programs 2023 of Renmin University of China。
文摘We utilize the calculation of hierarchical equations of motion to demonstrate that the spin-dependent properties between adjacent quantum dots(QDs)can be changed by breaking the internal symmetry configuration,corresponding to the inversion of dominant chiral states.In the linear triple quantum dots(LTQDs)connected to two electron reservoirs,we can observe that the blockage appears at the triangle triple quantum dots(TTQDs)by gradually increasing the coupling strength between next-nearest double QDs.When the initial coupling between LTQDs has altered,the internal chiral circulation also undergoes the corresponding transform,thus achieving qualitative regulation and detection of the blocking region.We also investigate the response of the chiral circulation to the dot–lead coupling strength,indicating the overall robust chiral circulation of the TTQDs frustration.
文摘The formation of self assembled CdSe quantum dots under Stranski Krastanow (S K) mode by low pressure metalorganic chemical vapor deposition (LP MOCVD) was reported for the first time. The samples were grown directly on GaAs (100) surfaces by LP MOCVD. DimethylSelenide (DMSe) and DimethylCadmium (DMCd) were used as precursors. The growth pressure was kept at 2 93×10 4Pa and the growth temperature was 500℃. CdSe with the thickness of about 2 monolayers was grown directly on GaAs (100) surfaces. For the purpose of AFM observation, this uncapped sample was cooled down immediately to room temperature and was monitored under a Digital Instruments Nanoscope Ⅲa system at the same day of growth. The AFM images show that the average diameter, height and density of those self assembled CdSe quantum dots are 50±15nm, 13±4nm and 5μm -2 , respectively. And those dots’ diameter height ratio is about 4～5, just the same as those results observed in other Ⅱ Ⅵ and Ⅲ Ⅵ compounds which were grown under S K mode by MBE.
文摘利用退火技术 ,实现了在低温 Ga As外延层上 In As量子点的生长 .透射电镜 (TEM)研究表明 ,低温 Ga As外延层上生长的 In As量子点比通常生长的 In As量子点明显变小 ,且密度变大 ,认为是由于低温 Ga As中的点缺陷以及 As沉淀引起的 :点缺陷释放了部分弹性能 ,使得量子点变小 ,而 As沉淀可能是量子点密度变大的原因 .在光致发光谱 (PL )上 ,退火低温外延层上生长的量子点的发光峰能量较高 。
