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A physical memristor model for Pavlovian associative memory
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作者 Jiale Lu haofeng ran +2 位作者 Dirui Xie Guangdong Zhou Xiaofang Hu 《Chinese Physics B》 2025年第1期507-517,共11页
Brain-inspired intelligence is considered to be a computational model with the most promising potential to overcome the shortcomings of the von Neumann architecture,making it a current research hotspot.Due to advantag... Brain-inspired intelligence is considered to be a computational model with the most promising potential to overcome the shortcomings of the von Neumann architecture,making it a current research hotspot.Due to advantages such as nonvolatility,high density,low power consumption,and high response ratio,memristors are regarded as devices with promising applications in brain-inspired intelligence.This paper proposes a physical Ag/HfO_(x)/FeO_(x)/Pt memristor model.The Ag/HfO_(x)/FeO_(x)/Pt memristor is first fabricated using magnetron sputtering,and its internal principles and characteristics are then thoroughly analyzed.Furthermore,we construct a corresponding physical memristor model which achieves a simulation accuracy of up to 99.72%for the physical memristor.We design a fully functional Pavlovian associative memory circuit,realizing functions including generalization,primary differentiation,secondary differentiation,and forgetting.Finally,the circuit is validated through PSPICE simulation and analysis. 展开更多
关键词 MEMRISTOR ASSOCIATIVE OVERCOME
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