摘要
Brain-inspired intelligence is considered to be a computational model with the most promising potential to overcome the shortcomings of the von Neumann architecture,making it a current research hotspot.Due to advantages such as nonvolatility,high density,low power consumption,and high response ratio,memristors are regarded as devices with promising applications in brain-inspired intelligence.This paper proposes a physical Ag/HfO_(x)/FeO_(x)/Pt memristor model.The Ag/HfO_(x)/FeO_(x)/Pt memristor is first fabricated using magnetron sputtering,and its internal principles and characteristics are then thoroughly analyzed.Furthermore,we construct a corresponding physical memristor model which achieves a simulation accuracy of up to 99.72%for the physical memristor.We design a fully functional Pavlovian associative memory circuit,realizing functions including generalization,primary differentiation,secondary differentiation,and forgetting.Finally,the circuit is validated through PSPICE simulation and analysis.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.62476230 and 61976246)
the Natural Science Foundation of Chongqing(Grant No.CSTB2023NSCQ-MSX0018)
Fundamental Research Funds for the Central Universities(Grant No.SWUKR22046)。
作者简介
Corresponding author: Jiale Lu,E-mail: krislu 111@163.com;Corresponding author: Guangdong Zhou,E-mail: zhougd@swu.edu.cn;Corresponding author: Xiaofang Hu,E-mail: huxf@swu.edu.cn。
