The sensitivity of the dark photon search through invisible decay final states in low-background experiments relies sig-nificantly on the neutron and muon veto efficiencies,which depend on the amount of material used ...The sensitivity of the dark photon search through invisible decay final states in low-background experiments relies sig-nificantly on the neutron and muon veto efficiencies,which depend on the amount of material used and the design of the detector geometry.This paper presents the optimized design of the hadronic calorimeter(HCAL)used in the DarkSHINE experiment,which is studied using a GEANT4-based simulation framework.The geometry is optimized by comparing a traditional design with uniform absorbers to one that uses different thicknesses at different locations on the detector,which enhances the efficiency of vetoing low-energy neutrons at the sub-GeV level.The overall size and total amount of material used in the HCAL are optimized to be lower,owing to the load and budget requirements,whereas the overall performance is studied to satisfy the physical objectives.展开更多
Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the...Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.展开更多
基金supported by National Key R&D Program of China(Nos.2023YFA1606904 and 2023YFA1606900)National Natural Science Foundation of China(No.12150006)Shanghai Pilot Program for Basic Research-Shanghai Jiao Tong University(No.21TQ1400209).
文摘The sensitivity of the dark photon search through invisible decay final states in low-background experiments relies sig-nificantly on the neutron and muon veto efficiencies,which depend on the amount of material used and the design of the detector geometry.This paper presents the optimized design of the hadronic calorimeter(HCAL)used in the DarkSHINE experiment,which is studied using a GEANT4-based simulation framework.The geometry is optimized by comparing a traditional design with uniform absorbers to one that uses different thicknesses at different locations on the detector,which enhances the efficiency of vetoing low-energy neutrons at the sub-GeV level.The overall size and total amount of material used in the HCAL are optimized to be lower,owing to the load and budget requirements,whereas the overall performance is studied to satisfy the physical objectives.
基金the Science and Technology Program of Guangzhou(Grant No.202103030001)the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001)+8 种基金the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581)the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06)Jincheng Key Research and Development Project(Grant No.20210209)the Key R&D Program of Shanxi Province(Grant No.202102030201004)the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001)Shenzhen Technology Research Project(Grant No.JSGG20201102145200001)the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。
文摘Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.
