摘要
Here we report 1.3μm electrical injection lasers based on InAs/GaAs quantum dots(QDs)grown on a GaAs substrate,which can steadily work at 110-℃without visible degradation.The QD structure is designed by applying the Stranski-Krastanow growth mode in solid source molecular beam epitaxy.The density of InAs QDs in the active region is increased from 3.8×10^(10)cm^(-2)to 5.9×10^(10)cm^(-2).As regards laser performance,the maximum output power of devices with lowdensity QDs as the active region is 65 m W at room temperature,and that of devices with the high-density QDs is 103 mW.Meanwhile the output power of high-density devices is 131 mW under an injection current of 4 A at 110-℃.
作者
苏向斌
邵福会
郝慧明
刘汗青
李叔伦
戴德炎
尚向军
王天放
张宇
杨成奥
徐应强
倪海桥
丁颖
牛智川
Xiang-Bin Su;Fu-Hui Shao;Hui-Ming Hao;Han-Qing Liu;Shu-Lun Li;De-Yan Dai;Xiang-Jun Shang;Tian-Fang Wang;Yu Zhang;Cheng-Ao Yang;Ying-Qiang Xu;Hai-Qiao Ni;Ying Ding;Zhi-Chuan Niu(State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China;James Watt School of Engineering,University of Glasgow,Glasgow,G128LT,UK)
基金
the Science and Technology Program of Guangzhou(Grant No.202103030001)
the KeyArea Research and Development Program of Guangdong Province(Grant No.2018B030329001)
the National Natural Science Foundation of China(Grant Nos.62035017,61505196,and 62204238)
the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)
the Major Program of the National Natural Science Foundation of China(Grant Nos.61790580 and 61790581)
the Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation Project(Grant No.21SH06)
Jincheng Key Research and Development Project(Grant No.20210209)
the Key R&D Program of Shanxi Province(Grant No.202102030201004)
the R&D Program of Guangdong Province(Grant Nos.2018B030329001 and2020B0303020001)
Shenzhen Technology Research Project(Grant No.JSGG20201102145200001)
the National Key Technologies R&D Program of China(Grant No.2018YFA0306100)。
作者简介
Corresponding Authors:Zhi-Chuan Niu E-mail:zcniu@semi.ac.cn。
