Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The ...Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The NN4 pair, either not present or only a small obscure peak under a proper excitation condition in the steady-state photoluminescence spectrum, is well resolved by TRPL.展开更多
The photoluminescence of GaAs_(0.15)P_(0.85):N has been studied at 77K under hydrostatic pressure.The NN1 emission is clearly observed when P>l0kbar.This result indicates that pressure enhances the thermally assist...The photoluminescence of GaAs_(0.15)P_(0.85):N has been studied at 77K under hydrostatic pressure.The NN1 emission is clearly observed when P>l0kbar.This result indicates that pressure enhances the thermally assisted Nx→NN_(1) exciton transfer.The pressure behaviors of N_(x) and NN_(1) levels are analysed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60276002.
文摘Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The NN4 pair, either not present or only a small obscure peak under a proper excitation condition in the steady-state photoluminescence spectrum, is well resolved by TRPL.
基金Project supported by the National Science Fundation of China.
文摘The photoluminescence of GaAs_(0.15)P_(0.85):N has been studied at 77K under hydrostatic pressure.The NN1 emission is clearly observed when P>l0kbar.This result indicates that pressure enhances the thermally assisted Nx→NN_(1) exciton transfer.The pressure behaviors of N_(x) and NN_(1) levels are analysed.
