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NN PAIR EMISSION IN GaAs_(0.15)P_(0.85): N UNDER HYDROSTATIC PRESSURE

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摘要 The photoluminescence of GaAs_(0.15)P_(0.85):N has been studied at 77K under hydrostatic pressure.The NN1 emission is clearly observed when P>l0kbar.This result indicates that pressure enhances the thermally assisted Nx→NN_(1) exciton transfer.The pressure behaviors of N_(x) and NN_(1) levels are analysed.
作者 ZHANG Yong YU Qi ZHENG Jiansheng YAN Bingzhang WU Boxi LI Guohua WANG Zhaoping HAN Hexiang 张勇;余琦;郑健生;颜炳章;吴伯僖;李国华;汪兆平;韩和相(Department of Physics,Xiamen University,Xiamen Institute of Semiconductors Academia Sinica,Beijing)
机构地区 Department of Physics
出处 《Chinese Physics Letters》 SCIE CAS 1988年第8期353-356,共4页 中国物理快报(英文版)
基金 Project supported by the National Science Fundation of China.
关键词 HYDROSTATIC
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