Electrochemical capacitance-voltage profiling,Raman and absorption spectroscopy measurements are employed to characterize the electronic and optical properties of silicon supersaturated with sulfur above the equilibri...Electrochemical capacitance-voltage profiling,Raman and absorption spectroscopy measurements are employed to characterize the electronic and optical properties of silicon supersaturated with sulfur above the equilibrium solubility limit.Silicon wafers are ion implanted with 50keV 32S+ to a dose of 1 × 10^(16) ions/cm^(2) and subsequently irradiated by femtosecond pulses at a fluence of 0.2 J/cm^(2),followed by thermal annealing at 825K for 30min.The spectral response of the photodiode fabricated from the laser-irradiated sample is also investigated.It is found that femtosecond laser irradiation and subsequent thermal annealing can electrically and optically activate the supersaturated sulfur dopant in silicon,as well as reduce the implantation-induced damage in the silicon lattice.展开更多
Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while ...Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.展开更多
Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported.Si is implanted with 1×10^(16) cm^(-2) Se ions...Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported.Si is implanted with 1×10^(16) cm^(-2) Se ions at 100 keV.The total substitutional fraction of Se atoms in Si is 45%under the annealing at 800℃ for 30 min and the peak concentration of substitutional Se atoms is exceeded 1×10^(20) cm^(-3).A temperature-independent carrier concentration of 3×10^(19) cm^(-3) is measured and the near-infrared absorption is closed to 30%.These results indicate the insulator-to-metal transition of the doped layer and the formation of impurity bands in the Si band gap.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976046,60837001 and 61021003the National Basic Research Program of China under Grant No 2012CB934204.
文摘Electrochemical capacitance-voltage profiling,Raman and absorption spectroscopy measurements are employed to characterize the electronic and optical properties of silicon supersaturated with sulfur above the equilibrium solubility limit.Silicon wafers are ion implanted with 50keV 32S+ to a dose of 1 × 10^(16) ions/cm^(2) and subsequently irradiated by femtosecond pulses at a fluence of 0.2 J/cm^(2),followed by thermal annealing at 825K for 30min.The spectral response of the photodiode fabricated from the laser-irradiated sample is also investigated.It is found that femtosecond laser irradiation and subsequent thermal annealing can electrically and optically activate the supersaturated sulfur dopant in silicon,as well as reduce the implantation-induced damage in the silicon lattice.
文摘Asymmetric resistive switching processes were observed in W：AlOx/WOy bilayer RRAM devices. During pulse programming measurements, the RESET speed is in the range of hundreds of microseconds under - 1.1 V bias, while the SET speed is in the range of tens of nanoseconds under 1.2 V bias. Electrical measurements with different pulse conditions and different temperatures were carded out to understand these significant differences in switching time. A redox reaction model in the W：AlOx/WOy device structure is proposed to explain this switching time difference.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976046,60776046,60837001 and 61021003the National Basic Research Program of China(973 Program)(2010CB933800).
文摘Optical and electrical properties of single-crystal Si supersaturated with Se by ion implantation and followed by different thermal annealing conditions are reported.Si is implanted with 1×10^(16) cm^(-2) Se ions at 100 keV.The total substitutional fraction of Se atoms in Si is 45%under the annealing at 800℃ for 30 min and the peak concentration of substitutional Se atoms is exceeded 1×10^(20) cm^(-3).A temperature-independent carrier concentration of 3×10^(19) cm^(-3) is measured and the near-infrared absorption is closed to 30%.These results indicate the insulator-to-metal transition of the doped layer and the formation of impurity bands in the Si band gap.
