With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal ...With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO_(2)/Si substrate,which can be easily transferred onto 2D semiconductors to form van der Waals(vdW)contacts.In this method,polymethyl methacrylate(PMMA)serves both as an electron resist for electrode patterning and as a sacrificial layer.Contacted with our transferred electrodes,MoS2exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions,while In Se shows pronounced ambipolarity.Additionally,usingα-In2Se3as an example,we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors.Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.展开更多
基金supported by the National Key Research&Development Project of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+4 种基金Strategic Priority Research Program of Chinese Academy of Sciences(CAS,Grant Nos.XDB30000000 and XDB28000000)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)Beijing Outstanding Young Scientist Program(Grant No.BJJWZYJH01201914430039)support from the Electron Microscopy Center at the University of Chinese Academy of Sciences。
文摘With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO_(2)/Si substrate,which can be easily transferred onto 2D semiconductors to form van der Waals(vdW)contacts.In this method,polymethyl methacrylate(PMMA)serves both as an electron resist for electrode patterning and as a sacrificial layer.Contacted with our transferred electrodes,MoS2exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions,while In Se shows pronounced ambipolarity.Additionally,usingα-In2Se3as an example,we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors.Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.