It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimati...It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60506004)the National High Technology Research and Development Program of China (Grant No. 2003AA513010)
文摘It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.
