利用电子衍射、X射线衍射和荧光光谱等方法研究了 L n Ba B9O16(L n=L a,Y)的结构特性 .L n Ba B9O16为单斜晶系 ,其中 L a Ba B9O16的晶胞参数 a=1.36 6 0 nm,b=0 .7882 nm,c=1.6 2 53nm,β=10 6 .15°;YBa B9O16的晶胞参数 a=1.34...利用电子衍射、X射线衍射和荧光光谱等方法研究了 L n Ba B9O16(L n=L a,Y)的结构特性 .L n Ba B9O16为单斜晶系 ,其中 L a Ba B9O16的晶胞参数 a=1.36 6 0 nm,b=0 .7882 nm,c=1.6 2 53nm,β=10 6 .15°;YBa B9O16的晶胞参数 a=1.3476 nm,b=0 .7776 nm,c=1.6 0 4 0 nm,β=10 6 .38°.荧光光谱研究表明 ,这两种化合物结构不同 ,Y3 +在 YBa B9O16结构中处于中心对称格位 ,而 L a Ba B9O16中 L a3 +的格位则无中心对称性 .Gd3 +部分取代 L a Ba B9O16∶ Eu3 +中的 L a3 +可改善 Eu3 +离子的发光性质 .L a Ba B9O16∶ Eu3 +在真空紫外区的吸收比较弱 ,这可能与硼氧比较小有关 .展开更多
Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diam...Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2. 71 e V and a deep level emission band peaked at around 2.00 eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.展开更多
Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond fil...Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model.The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.展开更多
文摘利用电子衍射、X射线衍射和荧光光谱等方法研究了 L n Ba B9O16(L n=L a,Y)的结构特性 .L n Ba B9O16为单斜晶系 ,其中 L a Ba B9O16的晶胞参数 a=1.36 6 0 nm,b=0 .7882 nm,c=1.6 2 53nm,β=10 6 .15°;YBa B9O16的晶胞参数 a=1.3476 nm,b=0 .7776 nm,c=1.6 0 4 0 nm,β=10 6 .38°.荧光光谱研究表明 ,这两种化合物结构不同 ,Y3 +在 YBa B9O16结构中处于中心对称格位 ,而 L a Ba B9O16中 L a3 +的格位则无中心对称性 .Gd3 +部分取代 L a Ba B9O16∶ Eu3 +中的 L a3 +可改善 Eu3 +离子的发光性质 .L a Ba B9O16∶ Eu3 +在真空紫外区的吸收比较弱 ,这可能与硼氧比较小有关 .
基金Supported by the National Natural Science Foundation of China under Grant Nos 10374004, 90201037, and 50172001, the State Key Lab on Integrated 0ptoelectronics, and the National Center for Nanoscience and Technology, China.
文摘Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50-80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2. 71 e V and a deep level emission band peaked at around 2.00 eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.
基金Supported by the National Natural Science Foundation of China.
文摘Epitaxial diamond films on non-mirror polished silicon substrate was achieved using hot filament chemical vapor deposition method with one flat horizontal filament.The orientation relationship of epitaxial diamond films on silicon substrate has been investigated by cross-sectional high-resolution transmission electron microscopy We found one excellent epitaxial configuration and according to the experimental result we suggest a corresponding model.The lattice misfit is only 0.1-2.8% related to our model and the analysis of 60° type interface dislocation also supports this model.
