Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowi...Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.展开更多
Ultra-violet （KrF excimer laser,λ =248 nm） laser lift-off （LLO） techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation ind...Ultra-violet （KrF excimer laser,λ =248 nm） laser lift-off （LLO） techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-off （UV-LLO） has been characterized by micro-Raman spectroscopy, miero-photoluminescence, along with high-resolution transmission electron microscopy （HRTEM）. HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagona/GaN. The half-loop-clusterlike UV-LLO interface indicates that the LLO-indueed shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface.展开更多
基金Supported by the National Natural Science Foundation of China, the National Basic Research Programm of China under Grant Nos 2002CB613505 and 2007CB936202, and the NSFC-RCC under Grant No 20731160012.
文摘Large quantities of metal indium single-crystalline wires with diameters ranging from tens of nanometres to a few micrometres were synthesized on Si substrates. Unlike traditional methods for the fabrication of nanowires or nanorods, liquid indium was squeezed out of the pores and cracks from porous an InAlN layer to form the wires. Continuous pushing out of liquid metal indium under strength, lowering of liquid-solid interfaces and the confinement of the cracks all contribute to the growth of indium wires. Our experiments have shed some light on the possibility of synthesizing large quantities quasi-1D nano/sub-micron structures with specified cross-sectional geometry using the similar method.
基金Supported by the National High Technology Research and Development Programme of China under Grant No 2005AA31G020, the National Basic Research Programme of China under Grant Nos 2002CB613505 and 2007CB307004, and the National Natural Science Foundation of China under Grant Nos 60477011, 60577030, and 60607003.
文摘Ultra-violet （KrF excimer laser,λ =248 nm） laser lift-off （LLO） techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-off （UV-LLO） has been characterized by micro-Raman spectroscopy, miero-photoluminescence, along with high-resolution transmission electron microscopy （HRTEM）. HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagona/GaN. The half-loop-clusterlike UV-LLO interface indicates that the LLO-indueed shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface.
