摘要
用化学气相沉积法在管式炉中制备了SnO2掺Ag纳米线。纳米线直径约50 nm,长几十微米。通过XRD、TEM和Raman谱仪等测量确定SnO2掺Ag纳米线为金红石型结构,XPS谱表明样品中含有Sn、O和Ag元素,Ag的浓度约为1.8 at.%,室温PL谱显示样品在626nm处有很强的红光发射峰。
Ag doped SnO2 nanowires were synthesised by chemical vapor deposition （CVD） method in a typical horizontal tube furnace. The diameter and length of these nanowires were about 50 nanometers and tens of micrometers, respectively. XRD, TEM and Raman spectroscopy results showed that these nanowires were rutile SnO2 sturcture. XPS spectrum revealed that these nanowires consisted of Sn, O and Ag elements, and the concentrate of Ag was about 1.8 at. %. PL spectra showed that the products exhibited a strong red-light emission at about 626 nm.
出处
《电子显微学报》
CAS
CSCD
2008年第4期261-265,共5页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金资助项目(Nos.90606023,10574003,20731160012)~~
关键词
SnO2纳米线
掺杂
制备
结构
发光
SnO2 nanowires
doped
synthesis
structure
photoluminescent
作者简介
王朋伟（1978-），河南人，男（汉族），博士．
通讯作者：俞大鹏（1959-），男（汉族），宁夏人，教授，博士研究生导师．E-mail：yudp@pku．edu．cn．
