摘要
本论文采用水热法,以钨酸钠制备了六方相三氧化钨纳米半导体材料。采用硼氢化钠还原方法将贵金属Pd以不同比例负载到WO3催化剂上,分别制备出0.5% Pd/WO3、1% Pd/WO3、1.5% Pd/WO3复合材料。通过XRD和SEM对其结构和形貌进行了表征。以CH3OH耦合CO2制备碳酸二甲酯(DMC)为探针反应,探究其光催化性能。研究表明,成功制备得的WO3半导体材料,经过Pd金属复合的光催化剂表现出更高的光催化CO2转化活性,负载Pd金属的WO3的光催化性能显著高于纯WO3。其中,0.5% Pd/WO3的DMC产率最高,为3.52 μg.g−1,是WO3样品的5.6倍。DRS和电化学测试结果表明提高的性能来源于Pd/WO3更高的光吸收性能和光电响应强度。
In this paper, hexagonal tungsten trioxide semiconductor materials were prepared by hydrothermal method with sodium tungstate as the precursor. The precious metal Pd was loaded onto WO3 via the sodium borohydride reduction method. The 0.5% Pd/WO3, 1% Pd/WO3, 1.5% Pd/WO3 composites were synthesized. The structure and morphology of the obtained samples were characterized by XRD and SEM. The photocatalytic activity of the as prepared samples were evaluated by CO2 coupled with CH3OH into dimethyl carbonate (DMC). The results showed that the loading of Pd onto WO3 can significantly improve the photocatalytic performance. 0.5% Pd/WO3 show the highest DMC yield of 3.52 μg.g−1, which was 5.6 times higher than that of WO3 sample. The results of DRS and electrochemical measurements suggested that the improved performance originated from the higher light absorption performance and photoelectric response intensity of Pd/WO3.
出处
《材料科学》
2025年第6期1381-1386,共6页
Material Sciences
