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空间倒置InGaP/GaAs/In<sub>0.3</sub>Ga<sub>0.7</sub>As/In<sub>0.58</sub>Ga<sub>0.42</sub>As四结太阳结构参数对电池性能机理研究

Research on the Mechanism of Structural Parameters of Inverted InGaP/GaAs/In<sub>0.3</sub>Ga<sub>0.7</sub>As/In<sub>0.58</sub>Ga<sub>0.42</sub>As Four-Junction Solar Cells on Battery Performance
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摘要 本文使用计算机软件模拟了倒置四结电池,通过改变子电池的工作区厚度以及掺杂浓度等结构参数,探究其对电学特性的影响。改变InGaP等子电池发射区参数时,短波波长的光子受影响。改变基区参数时,影响长波长光子的吸收效率。随着四结倒置太阳电池的工作区厚度的增加,短路电流先升高再降低,开路电压几乎不变,最大功率也先升高再降低,基区是主要工作区,受到的影响大于发射区;随着InGaP等子电池发射区掺杂浓度的增加,电学参数几乎不受影响。随着子电池基区掺杂浓度变化,短路电流几乎不变,开路电压逐渐升高,最大功率的变化与开路电压变化保持一致。In this paper, computer software was used to simulate the inverted four-junction solar cell. By changing the structural parameters such as the thickness of the working region and the doping concentration of the sub-cells, the impact on their electrical characteristics was explored. When parameters of the emitter region of sub-cells like InGaP were changed, photons with short wavelengths were affected. When parameters of the base region were changed, the absorption efficiency of photons with long wavelengths was influenced. As the thickness of the working region of the inverted four-junction solar cell increased, the short-circuit current first increased and then decreased, the open-circuit voltage remained almost unchanged, and the maximum power also first increased and then decreased. The base region is the main working area and was more affected than the emitter region. As the doping concentration of the emitter region of sub-cells like InGaP increased, the electrical parameters were hardly affected. As the doping concentration of the base region of the sub-cells changed, the short-circuit current remained almost unchanged, the open-circuit voltage gradually increased, and the change in the maximum power was consistent with that of the open-circuit voltage.
作者 刘雯
出处 《材料科学》 2025年第2期221-226,共6页 Material Sciences
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