摘要
随着智能化弹药进一步向精准化、小型化发展,硅基PIN光电探测器由于具有高响应度、短响应时间、小体积、低功耗、强抗干扰等优点而广泛应用于激光制导等领域。然而,暗电流作为制约PIN探测器性能的重要参数一直备受关注,减小暗电流可以有效改善探测器的灵敏度,提高其信噪比。因此,主要介绍了PIN探测器暗电流的产生机制,重点探讨了优化探测器暗电流的方法,主要从钝化工艺、掺杂技术、I层厚度、温度、电场隔离结构、pn结面积等方面综述了暗电流的研究进展,为PIN探测器在智能弹药导航领域的应用奠定了坚实的理论基础。
With the further development ofprecision and miniaturization of intelligent ammunition, silicon substrate positive-intrinsic-negative(PIN) photodetectors were widely used in laser guidance due to their highresponsiveness, short response time, small size, low power consumption, stronganti-jamming. Nevertheless, dark current was paid much attention as an importantparameter that restricts the performance of PIN detector. Detector sensitivityand signal-to-noise ratio can be effectively enhanced by reducing the darkcurrent. Therefore, the mechanism of dark current of the PIN detector wasintroduced in this paper. At the same time, the method of optimizing the darkcurrent of the detector was emphatically discussed. In addition, the researchprogress of dark current regulation was summarized from the aspects of passivationtechnology, doping technology, I layer thickness, temperature, electric fieldseparation, pn junction area, which lays a solid theoretical foundation for theapplication of the PIN detector in the field of intelligent ammunitionnavigation.
出处
《传感器技术与应用》
2021年第3期125-133,共9页
Journal of Sensor Technology and Application
