摘要
采用X射线衍射分析和透射电镜研究了Si-Ti-B掺杂金刚石的烧结过程和显微结构。其烧绪过程可分为四个阶段。Si、Ti与金刚石的表面碳或石墨反应生成碳化物,通过碳化物的烧结将金刚石晶粒结合起来。β-SiC是重要粘结相,为取向不同的层错型孪生组织,呈网状分布于金刚石晶粒之间。TiC呈颗粒状分布在金刚石和β-SiC晶粒之间。
The sintering process and the microstructure of Si-Ti-B doped diamond were studied by XDA and TEM. The sintering process can be divided into four stages. Si-Ti react xith the carbon on the surface of diamond particles to form SiC and TiC. The diamond particles are bonded by the sintering of carbides The layer like β-SiC in random orientation is main constituent of binder phase and surrounds the diamond grains. TiC particles in the binder phase locate in the boundaries between diamond and β-SiC grain.
出处
《材料科学与工程》
CSCD
1993年第3期41-45,共5页
Materials Science and Engineering
关键词
金刚石
掺杂
烧结
硬质合金
diamond
Si-Ti-B dopant
sintering
microstructure
