摘要
用一种新型磁控溅射气体凝聚团簇源产生Cu-n(n是团簇原子个数)团簇束,当团簇束分别在偏压为:0,1,3,5,10kV的电场中加速后,在真空中,沉积在室温下的P型Si(111)衬底上,获得Cu/P-Si(111)薄膜样品。用X射线光电子能谱(XPS)分析薄膜,结果表明:薄膜本身不含C和O等杂质;当Cu/P-Si(111)样品暴露在空气中时,样品表面会氧化和碳污染,铜的特征电子峰几乎被湮没。用能量3keV流强为4～6μA/cm2Ar+束,预溅射处理样品表面后,用XPS分析,常规磁控溅射室温下得到的Cu/P-Si(111)样品和铜团簇束沉积,偏压分别为0,1,3,5,10kV的样品XPS谱和块状Cu标样谱基本一样,Cu2P1、Cu2P3、CuLMM特征峰位没有移动,反映不出原子结合能差异。
Cu^-_n (n is the atom number of the cluster) cluster beam was produced by a new magnetron sputter gas aggregation cluster source. The beam was accelerated by the voltage 0,1,3,5,10 kV and deposited onto polished P-Si(111) substrate surface at room temperature in Vacuum, respectively, then the thin film samples of Cn/P-Si(111) were prepared. XPS (X-ray photoelectron energy spectrum) analysis shows that: the thin film samples without carbonized and oxidized in deposited process can be oxidized and carbonized when they were exposed in the air, and the characteristic peak of copper was nearly buried. After dealing with the surface of the sample by pre-sputter, using Ar^+ beam with the energy 3 keV and the intensity 4～6 (μA/cm^2) and then by XPS analysis, the XPS spectrums of the film Cu/P-Si(111) deposited by using the ordinary magnetron sputter at room temperature and the film deposited by using the new cluster source under the biased voltage 1,3,5,10 kV are approximately the same as the standard spectrums of bulk Cu. the characteristic peaks of Cu2P1,Cu2P3,CuLMM do not shift and therefore it can not give the information about the differences of atomic binding energy.
出处
《原子与分子物理学报》
CAS
CSCD
北大核心
2004年第2期191-194,共4页
Journal of Atomic and Molecular Physics
基金
中科院核分析技术(联合)开放实验室(上海应用物理所)资助项目
关键词
铜团簇束
碰撞沉积
单晶硅
XPS谱
薄膜中的原子结合能
Copper cluster beam
Collision deposition
Mono crystalline silicon
XPS spectrum
Atomic binding energy of thin film
