摘要
为了降低光在多晶硅表面的反射,采用化学腐蚀法在其表面制备了绒面。根据反射光谱的测试结果,研究了不同多晶硅绒面的形貌特征及光学特性。在适当的腐蚀液中制备了3×3cm2、5×5cm2和10×10cm2多晶硅绒面。10×10cm2多晶硅绒面,在300～1100nm波长范围内的加权反射率的最好结果为5 2%,表面织构均匀,这一结果可以和具有双层减反射膜的多晶硅表面的反射率相比拟。
The chemical etching method wa applied to form surface texture of multicrystalline silicon in order to reduce the reflectance of the surface. Morphology and optical properties of the texture were investigated by reflectance spectroscopy. The chemical etching method has been studied to form surface texture of multicrystalline silicon (3×3cm^2,5×5cm^2 and 10×10cm^2) in appropriate etching solutions. The reflectance R_W on multicrystalline silicon surface (10×10cm^2) of 0.052 has been obtained in the wavelength range of 300nm～1100nm by the chemical etching. That is comparable in chemical etching to a conventionally pretextured Si surface covered by a double layer ARC.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2004年第2期138-141,共4页
Acta Energiae Solaris Sinica
基金
河南省自然科学基金资助项目(004040200)
关键词
多晶硅
化学腐蚀
绒面
多孔硅
减反射膜
multicrystalline silicon
chemical etching
texture
porous silicon
anti-reflection layer
