摘要
采用透射光谱分析、荧光脉冲响应分析及荧光发射光谱等测试手段,研究了一系列不同量铕掺杂 BGO 晶体的辐照损伤及余辉。结果表明,5 ppm Eu_2O_3(wt)掺杂即可达到最佳的抗辐照损伤能力,而且因为 Eu^(3+)离子浓度低,由它引起的荧光衰减余辉也很小。还讨论了微量铕掺杂能提高 BGO 晶体抗辐照损伤能力和随同产生余辉的机制。
The radiation damage and afterglow of a series of Eu-doped BGO crystals werestudied by means of optical transmission spectra,fluorescence emission spectra andfluorescence pulse response analyses。Experimental results showed that a doping of5 ppm of Eu_2O_3(wt)in BGO crystal is enough to achieve the optimum conditionof radiation hardness and only a very small amplitude of afterglow appeared due toits low Eu^(3+) ion concentration.The mechanism of the improvement of the radiationhardness and the appearance of afterglow by doping small amount of Eu_2O_3 inBGO crystals were also discussed in the present paper.
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第1期1-6,共6页
Journal of Inorganic Materials
关键词
辐照损伤
BGO
晶体
铋
铕
余辉
Radiation damage
Afterglow
Scintillation decay
