摘要
对3种不同容量的EEPROM开展了"强光一号"瞬时剂量率效应实验研究,测量电路的剂量率闩锁特性、高剂量率辐照下的数据保持能力及电路功能。辐照前,利用编程器在EEPROM中全地址写入55H,加电辐照,测量辐照后的电源电流;辐照后,再利用编程器对EEPROM的存储数据及读写功能进行测量。研究结果表明:EEPROM在瞬时辐照下,主要表现为外围电路的剂量率闩锁效应;在1.0×109 Gy(Si)/s的高剂量率辐照下,3种电路存储的数据保持完好,未发生变化,存储器的擦除、编程及读出功能正常。给出了3种EEPROM电路的剂量率闩锁阈值,并对EEPROM的瞬时剂量率效应特点进行了分析。
Transient dose rate effects were studied for three kinds of floating gate electrically erasable programmable read only memories(EEPROMs)using Qiangguang-1accelerator.The dose rate latchup characterization and high dose rate memory retention were tested.Prior to exposure,each byte was written with a 55H(01010101).EEPROMs were powered on during exposure.After exposure,supply currents and memory data of EEPROMs were measured.The result shows that EEPROMs are susceptible to latchup.Average latchup levels are 2.0×107,2.3×107 and 7.0×106 Gy(Si)/s for AT28C256,AT28C010 and AT28C040.Following exposure to 1.0×109 Gy(Si)/s,no data was lost and all EEPROMs can be read and written exactly.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2014年第S1期727-731,共5页
Atomic Energy Science and Technology
基金
装备预先研究项目资助
