摘要
采用有限元方法分析了钼基体半径对金刚石膜残余应力的影响,得出了膜内径向应力、轴向应力、剪切应力分布的等值线图。结果表明:径向应力在膜内大部分区域为压应力,其最大值随着钼基体半径的增大而减小;轴向应力在金刚石膜的侧面边缘处出现了较大的拉应力,且其值随着半径的增大而增大,与此同时在侧面膜/基界面边缘处出现了明显的应力集中现象;剪切应力的最大值随着钼基体半径的增大而增大。此结论可以在金刚石膜制备过程中,对应力进行有效的控制提供一定的参考价值。
The effects of different Mo substrate radii on the residual thermal stress in diamond films were analyzed with the finite element method. The contour plots of radial stress, axial stress and shear stress in diamond films were obtained. The results show that the radial stress is compressive in most area of the film and the maximum of the radial compressive stress decreases with the Mo substrate radius. The large axial tensile stress occurs at the side face of the diamond film and increases with the substrate radius. At the same time, the obvious stress concentration occurs at the edge of the film/substrate interface. Besides, the shear stress becomes larger with the Mo substrate radius. These conclusions provide some reference value to control the thermal stress effectively during the preparation of diamond films.
出处
《应用数学和力学》
CSCD
北大核心
2014年第S1期156-159,共4页
Applied Mathematics and Mechanics
基金
四川省应用基础项目(2012JY0026)
关键词
金刚石膜
钼基体半径
残余热应力
膜/基界面
diamond film
Mo substrate radius
residual thermal stress
film/substrate interface
