摘要
介绍压阻式硅微加速度计的结构设计。采用等离子体刻蚀技术制作成硅微加速度计。该技术具有腐蚀深宽比高、掩模选择性好的特点,适用于微机械器件的制作。通过测试,加速度计的非线性达到0.2%。讨论了影响加速度计灵敏度的结构因素和工艺因素。
Structure design of piezoresistive silicon-micro-accelerometer is introduced. Silicon-micro-accelerometer is fabricated by plasma etch technology. The characters of the technology are high aspect ratio and very high mask selectivities. The technology is applied to micro-machine fabrication. Through testing, non-linearity of the accelerometer is 0.2%. Structure factor and technology factor effecting sensitivity of the accelerometer are discussed.
出处
《传感器技术》
CSCD
北大核心
2003年第12期40-42,共3页
Journal of Transducer Technology
