摘要
本文利用ADS(advanced design system)软件建立了太赫兹肖特基二极管的SDD(symbolically-defined device)模型。该模型基于肖特基二极管的半导体理论,采用方程的形式来描述端口的特性。仿真得到的I-V曲线与实测结果有很高的吻合度,C-V曲线也与理论预测一致,最后将该SDD模型应用到一个140-160GHz理想平衡式二倍频器中,仿真得到的效率大于76.5%。当用与之参数一致的ADS自带的spice(simulation program with integrated circuit emphasis)模型代替后,二者的仿真结果具有很高的一致性。这说明了该SDD模型的准确性。相对于一般的spice模型,该SDD二极管模型的优势是结构简单、灵活性高,可根据用户需要灵活调整所有的方程和参数。
In this paper, a SDD(symbolically-defined device) model of the Schottky barrier diode is built by using ADS(advanced design system). This model is based on semiconductor theory and the terminal characteristics are described by equations. The simulated I-V shows a good agreement with the measured one. The simulated C-V also agrees well with theory prediction. We have also used the SDD model into a 140-160 GHz ideal frequency doubler and the simulated efficiency is better than 76.5%. When the SDD model is replaced by the corresponding spice(simulation program with integrated circuit emphasis) model, the two simulated results show a very good agreement, which proves the validation of the SDD model. The advantages of SDD model are its simplicity and flexibility. Users can modify every equation and parameter as they want.
出处
《微波学报》
CSCD
北大核心
2016年第S2期429-431,共3页
Journal of Microwaves
基金
国家高技术研究发展计划(2011AA010203)
