摘要
分析并模拟了 SOINMOSFET的电源电压、工艺参数、沟道长度等对器件内部电场的影响 ,并对器件的低压热载流子效应进行实验测试 ,得到了不同应力条件下最大线性区跨导和阈值电压的退化结果 ,以及器件尺寸对这种退化的影响。并实验测试了一个
The hot\|carrier induced device degradations are analyzed,including the variations of the maximum transconductance Gmmax,the threshold voltage Vth,and the drain current as a function of the stress gate bias with the stress drain voltage. In this study, device lifetime is predicted for SOI nMOSFET.
出处
《浙江工业大学学报》
CAS
2003年第2期165-168,共4页
Journal of Zhejiang University of Technology
