摘要
研究了单向结晶速度Ｖ对ＩｎＳｂ－ＮｉＳｂ共晶磁致电阻性能Ｒ＿ｂ／Ｒ＿ｏ的影响。结果发现不同Ｖ，其Ｒ＿ｂ／Ｒ＿ｏ也不同。并且在Ｖ－Ｒ＿ｂ／Ｒ＿ｏ关系中存在着一个Ｒ＿ｂ／Ｒ＿ｏ最大值。这个最大值可由半导体的物理磁阻效应和几何磁阻效应的综合作用来说明。
The influence of unidirectional solidification rate V upon the magnetoresistanceproperty R_b/R_o of InSb-NiSb eutectic alloy has beenstudied.The result shows that the ratio R_b/R_o of theeutectic varies with the freezing rate V.A maximumvalue of R_b/R_oin the relation of V-R_b /R_ois found in the experiment, which can be explained by the physical and geometrical magnetoresistance effects.
出处
《功能材料》
EI
CAS
CSCD
1995年第3期220-225,共6页
Journal of Functional Materials
