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半导体断路开关实验研究 被引量:10

Experimental study on the characteristics of semiconductor opening switch
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摘要  介绍了半导体断路开关(SOS)特性参数测试平台和测试方法,并对半导体断路开关的截断阻抗、截断时间、电压增益、输出脉冲半高宽以及能量传递效率等参数进行了实验研究。结果表明,正、反向泵浦时间是影响半导体断路开关特性的最主要因素。实验获得了截断时间、电压增益和能量传递效率与正、反向泵浦时间的依赖关系以及SOS截断过程中的阻抗变化特性。 An experimental setup is developed to measure the characteristics of semiconductor opening switch (SOS). The parameters, such as interruption impedance, current interruption time, voltage gain, pulse duration and energy transfer efficiency, are studied experimentally. The experimental results show that forward pumping time and reverse pumping time are important parameters for semiconductor opening switches. The influences of forward pumping time and reverse pumping time on interruption time, voltage gain, and energy transfer efficiency are obtained. In the interruption process, the impedance variation is divided into three phases: that is rapid increasing phase, slow change phase and completely interruption phase.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2002年第6期949-953,共5页 High Power Laser and Particle Beams
基金 国家863激光技术领域资助课题
关键词 半导体断路开关 脉冲功率 能量传递效率 脉冲功率技术 semiconductor opening switch pulsed power energy transfer efficiency
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参考文献11

  • 1Kotov Y A, Mesyats G A, Rukin S N, et al. A novel nanosecond semiconductor opening switch for megavolt repetitive pulsed power technology: experiment and applications[A]. Proc 9th IEEE Int Pulsed Power Conf[C]. Albuquerque, NM, 1993 .134-139.
  • 2Mesyats G A, RukinS N, Lyubutin S K, et al. Semiconductor opening switch research at IEP[A]. Proc 10th IEEE Int Pulsed Power Conf[C]. Albuquerque, USA, 1995.1:298-305.
  • 3Lyubutin S K, Mesyats G A, Rukin S N, et al. Repetitive nanosecond all-solid-state pulsers based on SOS diodes[A]. Proc 11th IEEE Int. Pulsed Power Conf[C]. Baltimore, USA, 1997. 992-998.
  • 4Rukin S N, Mesyats G A, Darznek S A, et al. SOS-based power development and applications[A]. Proc 12th IEEE Int. Pulsed Power Conf[C]. Monterey, USA, 1999, 153
  • 5Katsuki S, Majima T, Nagata K, et al. Inactivation of bacillus stearothermophilus by pulsed electric field[J]. IEEE Trans Plasma Science,2000, 28(1):155-160.
  • 6Rukin S N, Mesyats G A, Ponomarev A V, et al. Megavolt repetitive SOS-based generator[A]. Proc 13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001. 340.
  • 7Teramoto Y, Deguchi D, Katsuki S, et al. All-solid-state trigger-less repetitive pulsed power generator utilizing semiconductor opening switch[A]. Proc 13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001, 480.
  • 8Darznek S A, Mesyats G A, Rukin S R. Theoretical model of the SOS effect[A]. Proc 11th Int Conf on High Power Particle Beams[C]. Prague, Czech Republic, 1996.2 :1241-1244.
  • 9Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switch[J]. IEEE Trans Plasma Science, 2000,28 (5):1540.
  • 10Engelko A, Bluhm H. Simulation of semiconductor opening switch physics[A]. Proc13th IEEE Int Pulsed Power Plasma Science Conf[C]. 2001.358.

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