摘要
测量与分析表明,锑化铟晶片的表面状况与化学腐蚀密切相关,起因于腐蚀液对表面的择优腐蚀及氧化。讨论了制备高性能器件的合理腐蚀步骤。
It is indicated from measurements that surface conditions of indium antimonidewafers are closely related to chemical etching, coming from preferential etching tosurface and oxidation of surface. Reasonable etch steps for preparation of good-quality devices are also discussed.
出处
《红外与毫米波学报》
SCIE
EI
CAS
1984年第2期111-116,共6页
Journal of Infrared and Millimeter Waves
