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ZAO透明导电纳米薄膜中Al元素分布对其性能的影响 被引量：5

Al Element Distribution and the Properties of Transparent Conducting ZAO Nanometer Film
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摘要 主要对直流反应磁控溅射法制备ZAO纳米薄膜中Al元素的相对含量进行了分析,对其作了EDS,XRD测试,并研究了Al质量分数与ZAO薄膜的光、电性能的关系·得出ZAO薄膜中成分是均匀的,具有ZnO晶体结构;Al元素的掺杂没有形成新的化合物(Al2O3),Al对Zn的掺杂替换是提高ZAO薄膜导电性能的关键因素,对薄膜在可见光区的透射性影响不大·制备的薄膜最低电阻率为4 5×10-4Ω·cm,可见光透射率达到80%以上· The distribution of Al element in the ZAO nanometer film made by DC(direct current) magnetron reactive sputtering was investigated by means of EDS and XRD. The relationship of Al content on electronic and optical properties of the ZAO film were systematically examined. The results indicate that Al distribution in the ZAO film is uniform. The ZAO film have ZnO crystal structure and no alumium oxides was found. The doping Al replacement of Zn in the ZnO phase is the key factor in improving the conductivity of the ZAO film but no effect on the light transparence. The resistivity of the ZAO film is as low as 45×10-4Ω·cm and the transmissivity in visible region is around 80%.
作者 陆峰 徐成海 孙超 闻立时
机构地区 东北大学机械工程与自动化学院 中国科学院金属研究所
出处 《东北大学学报（自然科学版）》 EI CAS CSCD 北大核心 2003年第1期54-57,共4页 Journal of Northeastern University(Natural Science)
基金 国家自然科学基金资助项目(50172051).
关键词 透明导电纳米薄膜 AL元素 ZAO薄膜 Al质量分数 EDS XRD 电阻率 透射率 氧化锌薄膜 光性能 电性能 铝元素 ZAO film the content of Al element EDS XRD resistivity transmissivity
分类号 O484 [理学—固体物理] TN304.21 [电子电信—物理电子学]
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参考文献10

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同被引文献61

  • 1葛春桥,薛亦渝,胡小锋,郭爱云.溶胶-凝胶方法制备AZO薄膜及其光电性能研究[J].真空电子技术,2005,18(1):20-21. 被引量：4
  • 2[1]Yoo J,Lee J,Kim S,et al.High transmittance and low resistive ZnO:Al films for thin film solar cells[J].Thin Solid Films,2005,480-481:213～217.
  • 3[2]Hu J,Gordon R G.Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition[J].Appl.Phys,1992,71(2):880～890.
  • 4[3]Lee J H,Park B O.Transparent conducting ZnO∶Al,In and Sn thin films deposited by the sol-gel method[J].Thin Solid Films,2003,426:94～99.
  • 5[4]Hideaki A,Akio S,Tatsuhiko M,et al.Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition.Thin Solid Films,2003,445:263～267.
  • 6[5]Tsujino J,Homma N,Sugawara T,et al.Preparation of Al-doped ZnO thin films by RF thermal plasma evaporation[J].Thin Solid Films,2002,407:86～91.
  • 7[6]Nunes P.Performances presented by zinc oxide thin films deposited by spray pyrolysis[J].Thin Solid Films,1999,337:176～179.
  • 8[7]Jeong S H,Boo J H.Influence of target-to-substrate distance on the properties of AZO films grown by RF magnetron sputtering[J].Thin Solid Films,2004,447-448:105～110.
  • 9[8]Herrmann D,Oertel M,Menner R,et al.Analysis of relevant plasma parameters for ZnO:Al film deposition based on data from reactive and non-reactive DC magnetron sputtering[J].Surface & Coatings Technology,2003,174-175:39～47.
  • 10[9]Chen M,Pei Z L,Sun C,et al.Formation of Al-doped ZnO films by dc magnetron reactive sputtering[J].Materials Letters,2001,48:194～198.

引证文献5

二级引证文献31

东北大学学报（自然科学版）
2003年 第1期

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