摘要
通常限制碳化硅(SiC)金属-氧化物半导体场效应晶体管(metal-oxide-semiconductor field-effect transistor,MOSFET)可靠性的根本因素是非平稳工况下的结温波动。文中提出的等效栅极电阻控制方法克服了在线连续修改驱动电阻的困难;在此基础上,提出一种主动热管理方法,通过改变开关损耗的方式来抑制结温波动,同时给出结温调节范围的推导过程;搭建逆变器实验平台,验证理论分析的正确性。实验结果表明,该方法可显著降低SiC MOSFET各功率波动阶段的温度波动,最大波动范围由18.83℃降至9.85℃,SiC MOSFET的寿命延长约2.18倍。此外,考虑系统的效率因素,提出温控操作区间和结温控制系数的概念;最后,通过实验验证所提出的方法的有效性。
The fundamental factor limiting the reliability of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)is junction temperature fluctuation under ransient operating conditions.The equivalent gate resistance control(EGRC)method proposed in this paper overcomes the difficulty of continuously modifying the drive resistance online.On this basis,an active thermal management(ATM)method is utilized to restrict temperature fluctuations by altering the switching loss,after which the regulatory range is defined.An inverter experimental platform is built to verify the correctness of the theoretical analysis.The experimental results show that the ATM method significantly reduces the temperature fluctuation at each power fluctuation stage.The maximum fluctuation range of 18.83℃is reduced to 9.85℃,and the lifetime of the SiC MOSFET is prolonged by 2.18 times.In addition,considering the efficiency factor of the system,the concepts of temperature control operating space(TCOS)and junction temperature control coefficient(JTCC)are proposed.Finally,the effectiveness of the method proposed in this paper is proved by experimental verification.
作者
王若隐
郑宏
WANG Ruoyin;ZHENG Hong(School of Electrical and Information Engineering,Jiangsu University,Zhenjiang 212013,Jiangsu Province,China)
出处
《中国电机工程学报》
北大核心
2025年第12期4858-4869,I0028,共13页
PROCEEDINGS OF THE CHINESE SOCIETY FOR ELECTRICAL ENGINEERING
基金
国家自然科学基金项目(52077098)。
关键词
碳化硅金属-氧化物半导体场效应晶体管
结温波动
主动热管理
等效栅极电阻控制
可靠性
SiC metal-oxide-semiconductor field-effect transistor(MOSFET)
junction temperature fluctuation
active thermal management(ATM)
equivalent grid resistance control(EGRC)
reliability
作者简介
王若隐(1991),男,工学博士,讲师,研究方向为无线电能传输技术、宽禁带功率半导体器件高性能驱动及可靠性等,1000006773@ujs.edu.cn;通信作者:郑宏(1965),男,工学博士,教授,研究方向为电力电子技术、电能变换等,379152942@qq.com。
