期刊文献+

基于TLP5214的IGBT驱动保护电路设计

Design of IGBT Drive Protection Circuit Based on TLP5214
在线阅读 下载PDF
导出
摘要 绝缘栅双极型晶体管(IGBT)在大功率应用中的电热应力高、磁场环境恶劣,中、高压变频器因IGBT失效而导致的故障率和损毁率都不容忽视,为满足大功率IGBT对灵活可靠的驱动电路的需求,本文基于TLP5214设计了1700 V/600 A IGBT的驱动保护电路,计算了相关的驱动保护电路参数,并进行相应器件的选型。最后,搭建了双脉冲和短路实验平台,对所设计的驱动器进行了实验验证,结果表明,驱动器可以正常开关IGBT,在短路情况下可以检测短路故障并关断IGBT,有较好的应用和推广价值。 Insulated gate bipolar transistor(IGBT)has high electrothermal stress and harsh magnetic field environment in high-power applications.Due to the failure of IGBT,the failure rate and damage rate of medium and high voltage inverter can not be ignored.In order to meet the demand for flexible and reliable driving circuits for high-power IGBTs,this paper designs a driving protection circuit for 1700 V/600 A IGBTs based on the TLP5214,the relevant drive pro⁃tection circuit parameters are calculated,and the selection of the corresponding devices is carried out.Finally,a doublepulse and short-circuit test platform is built to experimentally verify the designed driver,and the results show that the driver can switch the IGBT normally,and can detect short-circuit faults and shut down the IGBT under short-circuit con⁃ditions.It has good application and popularization value.
作者 张瑜 文阳 Zhang Yu;Wen Yang(Engineering College,Xi’an Siyuan University,Xi’an 710038,China;Engineering Research Center on Additive Manufacturing Technology and Application in Universities of Shaanxi Province,Xi’an Siyuan University,Xi’an 710038,China;Xi’an University of Technology,Xi’an 710048,China)
出处 《电力电子技术》 2025年第6期128-132,共5页 Power Electronics
基金 陕西省自然科学基础研究计划(2024JC-YBQN-0603) 陕西省教育厅专项科研计划(23JK1602) 西安思源学院校长基金科研项目(XASYB24ZD02)。
关键词 绝缘栅双极型晶体管 驱动保护电路 大功率 insulate gate bipolar transistor drive protection circuit high-power
作者简介 张瑜(1988-),女,硕士,副教授,研究方向为大功率器件驱动与保护技术。
  • 相关文献

参考文献3

二级参考文献27

  • 1王兆安 黄俊.电力电子技术[M].北京:机械工业出版社,2002..
  • 2张立.现代电力电子技术基础[M].北京:高等教育出版社,2003.
  • 3西安电力电子技术研究所编.IGCT器件的应用及发展前景[G]//最新功率器件专集.第二集,2001.
  • 4Yanick L, Johann W K.Closed-Loop di/dt and dv/dt IGBT Gate Driver [ J ] . IEEE Transactions on Power Electronics, 2014, 30(6): 3402-3417.
  • 5Pierre L, Dominique B. State of the art of dv/dt and di/dt control of insulated gate power switches [ C ] //Conference Captech IAP1 : Power Supply and Energy Management for Defence Applications. Bruxelles(Belgium), 2007.
  • 6Application with SCALE-2 Gate Driver Cores-Application note, AN 1101 [ EB/OL ] . [2013-09-01 ]. http: //igbt-driver.power.com/ design-support/application-notes.
  • 7ACPL-344JT-Datasheet,AV02-4511EN [ EB/OL ] . [2014-06-01]. http: //www.avagotech.eom/docs/AV02-4511EN.
  • 8Pavel K, Robert H, Marita W. Digital drivers with exceptional protection[J]. Bodo's Power Systems,2009(1): 28-29.
  • 9Wolfgang F, Andre A, Stephan H. Real-time adjustable gate current control IC solves dv/dt problems in electric drives [ C ] //Int. Conf. Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM). Nuremberg(Germany), 2014: 98- 104.
  • 10EiceDRIVER^TM SIL/Boost-Next generation EiceDRIVERTM for hybrid and electric vehicle applications-Product Brief[EB/OL]. [2013-06-01 ]. http://www.infineon.com/cms/en/product/gate-driver/ isolated-gate-driver/gate_driver ic eicedriver_automotive/channel. html?channel=db3a3043136fc I dd011370ecaf57043d&tab=2.

共引文献22

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部