摘要
通过离子注入法,将Tb^(3+),Pr^(3+)共掺入了AlN薄膜。利用Raman光谱、高分辨薄膜X射线衍射和阴极荧光光谱等进行了结构和发光性质的表征。系统分析了Pr^(3+)的剂量变化对样品的结构、发光性能的影响。研究发现在Tb^(3+)剂量保持一定的情况下,Pr^(3+)的注入会导致晶格内部压应力增大,随着Pr^(3+)注入剂量的增大,晶体内部部分点缺陷发生复合,压应力得到部分释放。阴极荧光光谱显示,随着Pr^(3+)剂量的增加,Tb^(3+)发射强度与Pr^(3+)发射强度呈现出不同的变化趋势。进一步分析表明,存在Tb^(3+)至Pr^(3+)的共振能量传递:^(5)D_(4)[Tb^(3+)]+^(3)H_(5)[Pr^(3+)]→^(7)F_(5)[Tb^(3+)]+^(3)P_(1)[Pr^(3+)]。随着Pr^(3+)剂量的增加,色度坐标从(0.2682,0.3050)变化到(0.2937,0.3207),发光颜色由蓝绿色向黄绿色转变,色温由7336 K增至10260 K。证明通过改变Tb离子与Pr离子注入剂量比可有效实现发光颜色和色温的调控。
Wide bandgap semiconductors,such as AlN,can effectively suppress the temperature quenching effect and expand the spectral range due to their large band gap width.Through the doping of rare earth ions,it is hoped that the excellent optical and magnetic properties of rare earth ions and the good electrical properties of AlN can be integrated.Single-doped and co-doped wide-bandgap materials with different rare earth ions have bright application prospects and high commercial value in many fields such as photoelectric detection and lighting display.Doped rare earth ions usually form a variety of light-emitting centers under the action of defects,and the properties of different light-emitting centers are different,and the complex defect environment also plays an important role in the luminescence of rare earth ions.However,the luminescence intensity of rare earth ions doped with nitride needs to be improved,and the interaction of rare earth ions after co-doping is not clear.In this study,ion implantation was employed to co-dope Tb^(3+)+and Pr^(3+)into AlN thin films grown on sapphire by metal-organic chemical vapor deposition method and annealed at 1000℃under normal pressure for 2 h under NH_(3)atmosphere.During ion implantation,the beam is tilted approximately 10°relative to the normal of the AlN thin film(0002)surface,and the accelerating voltage is 200 keV.In order to characterize the stress changes of the annealed samples with different injection doses,HRXRD and Raman spectroscopy were performed on the samples.Its luminescence performance was measured by a Mono CL^(3+)cathode fluorescence spectrometer mounted on a Quanta400FEG field emission scanning electron microscope.The influence of varying Pr^(3+)doses on the structural integrity and luminescence behavior of the samples was systematically investigated.The sample and parabolic mirror remain in the same position throughout the test.The height of the parabolic mirror and the working distance during the test also remain constant.The instrument's acceleration voltage,spot size,aperture size,and integration time are all consistent.All tests were performed at room temperature.Results indicate that,under a constant Tb^(3+)+doses,the introduction of Pr^(3+)ions increases internal lattice stress.As the doses of Pr^(3+)increases,due to the cumulative effect,stacking faults or large clusters will be formed in the cascade,making the stacking network denser,and the point defects are easier to pass through the network,and the excess vacancies reaching the surface layer will cause the ion implantation area of the surface layer to shrink,thereby releasing the compressive stress to a certain extent.CL spectroscopy reveals divergent trends in the emission intensities of Tb^(3+)+and Pr^(3+)with increasing Pr^(3+)doses.The interaction between Tb^(3+)+and Pr^(3+)were investigated.It was found that there may be exit energy transfer pathway from Tb^(3+)+and Pr^(3+)in AlN,and the method that regulated the luminescence chromaticity by adjusting the ratio of Tb^(3+)+and Pr^(3+)was proved.Further analysis suggests the occurrence of resonant energy transfer from Tb^(3+)+to Pr^(3+),described by the transition^(5)D_(4)[Tb^(3+)+]+^(3)H_(5)[Pr^(3+)]→^(7)F_(5)[Tb^(3+)+]+^(3)P_(1)[Pr^(3+)].CIE software coordinates the luminescent colors in the material to form chromaticity coordinates.Color temperature indicates the temperature at which black will be heated to the desired color,measured in Kelvin.As the Pr^(3+)doses increases,the chromaticity coordinate shifts from(0.2682,0.3050)to(0.2937,0.3207),with the emission color transitioning from blue-green to yellow-green and the color temperature rising from 7336 K to 10260 K.This thesis shows that it is feasible to obtain light emission through Tb^(3+)+and Pr^(3+)doped AlN,especially the energy transfer between Tb^(3+)+and Pr^(3+)provides a new idea for the development of novel nitride photoelectric materials.
作者
孟河辰
罗璇
王晓丹
徐达
束正栋
曾雄辉
高晓冬
郑树楠
毛红敏
MENG Hechen;LUO Xuan;WANG Xiaodan;XU Da;SHU Zhengdong;ZENG Xionghui;GAO Xiaodong;ZHENG Shunan;MAO Hongmin(Key Laboratory of Efficient Low-carbon Energy Conversion and Utilization of Jiangsu Provincial Higher Education Institutions,School of Mathematics and Physics,Suzhou University of Science and Technology,Suzhou 215009,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)
出处
《光子学报》
北大核心
2025年第2期209-217,共9页
Acta Photonica Sinica
基金
国家自然科学基金(Nos.61974158,61306004)
江苏省自然科学基金(Nos.BK20191456,BK20221263)
江苏省“十四五”光学工程重点学科项目(No.2021135)
江苏省研究生科研创新计划项目(No.KYCX22_3266)。
关键词
氮化铝
宽禁带半导体
阴极荧光
离子注入掺杂
能量传递
Aluminum nitride
Wide band-gap semiconductor
Cathodoluminescence
Ion implantation doping
Energy transfer
作者简介
第一作者:孟河辰,2546807475@qq.com;通讯作者:王晓丹,xiaodanwang@mail.usts.edu.cn;通讯作者:曾雄辉,xhzeng2007@sinano.ac.cn。
