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一种低噪声和快速响应的低压差线性稳压器

A Low Noise and Fast Response Low Dropout Linear Regulator
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摘要 设计了一款基于超低通滤波器技术的低输出噪声的低压差线性稳压器(LDO)。根据典型LDO输出噪声的主要贡献点,采用含受控运放的超低通滤波器来降低基准信号的噪声,并解决低通滤波器截止频率与响应速度的矛盾。基于0.25μm CMOS工艺完成了LDO的设计和流片,其核心芯片的面积为700μm×750μm。测试结果表明,在输入电压为5 V、输出电压为3.3 V、负载电流为200 mA时,LDO的启动时间约为150μs,在1 kHz处的噪声为-138.15 dBV/√Hz,10 Hz~100 kHz内均方根(RMS)积分噪声约为17.0μV。 A low dropout linear regulator(LDO)with low output noise was designed based on ultra-low pass filter technology.According to the main contribution point of typical LDO output noise,an ultra-low pass filter controlled by operational amplifier was adopted in the design to reduce the noise of the reference signal,and solve the contradiction between the cutoff frequency and response speed of the low-pass filter.Based on 0.25μm CMOS process,the LDO with a core chip area of 700μmx750μm was designed and fabricated.The test results show that the startup time of the LDO is about 150μs at a load current of 200 mA,when the input voltage is 5 V and the output voltage is 3.3 V.The noise is-138.15 dBV/√Hz,10 Hz~100 kHz,and the root-mean-square(RMS)integrated noise is about 17.0μV in the range of 10 Hz-100 kHz.
作者 李飞宇 陈君涛 周爵 朱安康 Li Feiyu;Chen Juntao;Zhou Jue;Zhu Ankang(SUNV Electronics Technology Co.,Lid.,Suzhou 215000,China)
出处 《半导体技术》 北大核心 2025年第3期282-288,共7页 Semiconductor Technology
关键词 低噪声 低压差线性稳压器(LDO) 超低通滤波器 负载电流 启动时间 low noise low dropout linear regulator(LDO) ultra-low pass filter load current startup time
作者简介 李飞宇(1992-),男,重庆人,硕士,工程师,主要从事电源管理集成电路设计研究工作。
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  • 1肖皓洋,罗萍,杨朋博,李博.一种高电源抑制比LDO[J].微电子学,2020,0(1):60-64. 被引量:4
  • 2Hsuan-I Pan,Chin-Hung Cheng,Chern-Lin Chen.A CMOS Low Dropout Regulator Stable with Any Load Capacitor[C]//.2004 IEEE Region 10 Conference,Volume D,21-24 Nov,2004:266-269.
  • 3Hoon S K,Chen S,Maloberti F.A Low Noise High Power Supply Rejection Low Dropout Regulator for Wireless System-on Chip Applications[C]//.IEEE 2005 Custom Integrated Circuits Conference.759-762.
  • 4Sergio Franco.基于运算放大器和模拟集成电路的电路设计[M].(第3版)(刘树棠,朱茂林,荣玫译)西安:西安交通大学出版社,2009.312-321.
  • 5Behzad Razavi.模拟CMOS集成电路设计(陈贵灿,程军,张瑞智等译)[M].西安:西安交通大学出版社,2002,165-179.312-314.
  • 6John.C.Teel,Understanding Noise in LDO Linear Regulators[R].USA:Texas Instruments,2Q,2005.
  • 7Vello Mannama,Rein Sabolotny,Viktor Strik.Ultra Low Noise Low Power LDO Design[C]//.Baltic Electronics Conference,2006 International.
  • 8Jim Williams.LDO Noise Testing Depends on Filters[R].USA:Linear Technology Crop.
  • 9张强,陈贵灿,田泽,王进军,李攀.带有快速启动的高精密低噪声CMOS带隙基准[J].现代电子技术,2007,30(20):150-153. 被引量:2
  • 10徐静萍,来新泉.基于CMOS工艺的低噪声高稳定性LDO的设计[J].半导体技术,2007,32(12):1056-1059. 被引量:2

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